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Results: 1-11 |
Results: 11
GENERIC SCANNED-PROBE MICROSCOPE SENSORS BY COMBINED MICROMACHINING AND ELECTRON-BEAM LITHOGRAPHY
Authors: ZHOU H MIDHA A MILLS G THOMS S MURAD SK WEAVER JMR
Citation: H. Zhou et al., GENERIC SCANNED-PROBE MICROSCOPE SENSORS BY COMBINED MICROMACHINING AND ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 54-58
2-DIMENSIONAL WAVE-GUIDE BASED PHOTONIC MICROSTRUCTURES IN GAAS AND INP
Authors: KRAUSS TF SMITH CJM VOGELE B MURAD SK WILKINSON CDW GRANT RS BURT MG DELARUE RM
Citation: Tf. Krauss et al., 2-DIMENSIONAL WAVE-GUIDE BASED PHOTONIC MICROSTRUCTURES IN GAAS AND INP, Microelectronic engineering, 35(1-4), 1997, pp. 29-32
IMPROVING THE RESISTANCE OF PECVD SILICON-NITRIDE TO DRY-ETCHING USING AN OXYGEN PLASMA
Authors: HICKS SE MURAD SK STURROCK I WILKINSON CDW
Citation: Se. Hicks et al., IMPROVING THE RESISTANCE OF PECVD SILICON-NITRIDE TO DRY-ETCHING USING AN OXYGEN PLASMA, Microelectronic engineering, 35(1-4), 1997, pp. 41-44
METHOD OF DRY-ETCHING EVALUATION USING QUANTUM DOTS
Authors: RAHMAN M MURAD SK HOLLAND MC LONG AR WILLIAMSON JG
Citation: M. Rahman et al., METHOD OF DRY-ETCHING EVALUATION USING QUANTUM DOTS, Microelectronic engineering, 35(1-4), 1997, pp. 91-94
ANISOTROPIC PATTERN TRANSFER OF FINE RESIST FEATURES TO SILICON-NITRIDE VIA AN INTERMEDIATE TITANIUM LAYER
Authors: MIDHA A MURAD SK WEAVER JMR
Citation: A. Midha et al., ANISOTROPIC PATTERN TRANSFER OF FINE RESIST FEATURES TO SILICON-NITRIDE VIA AN INTERMEDIATE TITANIUM LAYER, Microelectronic engineering, 35(1-4), 1997, pp. 99-102
EFFECTS OF O-2 ADDITION TO SICL4 SIF4 AND THE THICKNESS OF THE CAPPING LAYER ON GATE RECESS ETCHING OF GAAS-PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: MURAD SK CAMERON NI BEAUMONT SP WILKINSON CDW
Citation: Sk. Murad et al., EFFECTS OF O-2 ADDITION TO SICL4 SIF4 AND THE THICKNESS OF THE CAPPING LAYER ON GATE RECESS ETCHING OF GAAS-PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3668-3673
SELECTIVE REACTIVE ION ETCHING OF INGAAS AND INP OVER INALAS IN SICL4SIF4/HBR PLASMAS/
Authors: MURAD SK BEAUMONT SP HOLLAND M WILKINSON CDW
Citation: Sk. Murad et al., SELECTIVE REACTIVE ION ETCHING OF INGAAS AND INP OVER INALAS IN SICL4SIF4/HBR PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2344-2349
DAMAGE-FREE AND SELECTIVE RIE OF GAAS ALGAAS IN SICL4/SIF4 PLASMA FORMESFET AND PSEUDOMORPHIC HEMTS GATE RECESS ETCHING/
Authors: MURAD SK WANG PD CAMERON NI BEAUMONT SP WILKINSON CDW
Citation: Sk. Murad et al., DAMAGE-FREE AND SELECTIVE RIE OF GAAS ALGAAS IN SICL4/SIF4 PLASMA FORMESFET AND PSEUDOMORPHIC HEMTS GATE RECESS ETCHING/, Microelectronic engineering, 27(1-4), 1995, pp. 439-444
NEW CHEMISTRY FOR SELECTIVE REACTIVE ION ETCHING OF INGAAS AND INP OVER INALAS IN SICL4 SIF4/HBR PLASMAS/
Authors: MURAD SK BEAUMONT SP WILKINSON CDW
Citation: Sk. Murad et al., NEW CHEMISTRY FOR SELECTIVE REACTIVE ION ETCHING OF INGAAS AND INP OVER INALAS IN SICL4 SIF4/HBR PLASMAS/, Applied physics letters, 67(18), 1995, pp. 2660-2662
SELECTIVE AND NONSELECTIVE RIE OF GAAS AND AL(X)GA(1-X)AS IN SICL4 PLASMA
Authors: MURAD SK WILKINSON CDW BEAUMONT SP
Citation: Sk. Murad et al., SELECTIVE AND NONSELECTIVE RIE OF GAAS AND AL(X)GA(1-X)AS IN SICL4 PLASMA, Microelectronic engineering, 23(1-4), 1994, pp. 357-360
VERY-LOW DAMAGE ETCHING OF GAAS
Authors: MURAD SK WILKINSON CDW WANG PD PARKES W SOTOMAYORTORRES CM CAMERON N
Citation: Sk. Murad et al., VERY-LOW DAMAGE ETCHING OF GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2237-2243
Risultati: 1-11 |