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Results: 1-25 | 26-44
Results: 1-25/44
SURFACE CLEANING OF COPPER BY THERMAL AND PLASMA TREATMENT IN REDUCING AND INERT AMBIENTS
Authors: HYMES S KUMAR KS MURARKA SP WANG W LANFORD WA
Citation: S. Hymes et al., SURFACE CLEANING OF COPPER BY THERMAL AND PLASMA TREATMENT IN REDUCING AND INERT AMBIENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1107-1109
THERMAL-STABILITY OF COPPER SILICIDE PASSIVATION LAYERS IN COPPER-BASED MULTILEVEL INTERCONNECTS
Authors: HYMES S KUMAR KS MURARKA SP DING PJ WANG W LANFORD WA
Citation: S. Hymes et al., THERMAL-STABILITY OF COPPER SILICIDE PASSIVATION LAYERS IN COPPER-BASED MULTILEVEL INTERCONNECTS, Journal of applied physics, 83(8), 1998, pp. 4507-4512
AN INVESTIGATION OF SLURRY CHEMISTRY USED IN CHEMICAL-MECHANICAL PLANARIZATION OF ALUMINUM
Authors: KALLINGAL CG DUQUETTE DJ MURARKA SP
Citation: Cg. Kallingal et al., AN INVESTIGATION OF SLURRY CHEMISTRY USED IN CHEMICAL-MECHANICAL PLANARIZATION OF ALUMINUM, Journal of the Electrochemical Society, 145(6), 1998, pp. 2074-2081
SUBSTRATE EFFECTS ON HARDNESS AND POLISHING OF SIO2 THIN-FILMS
Authors: KALLINGAL CG TOMOZAWA M MURARKA SP
Citation: Cg. Kallingal et al., SUBSTRATE EFFECTS ON HARDNESS AND POLISHING OF SIO2 THIN-FILMS, Journal of the Electrochemical Society, 145(5), 1998, pp. 1790-1794
BIAS-TEMPERATURE STABILITY OF THE CU(MG) SIO2/P-SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS/
Authors: DEFELIPE TS MURARKA SP BEDELL S LANFORD WA
Citation: Ts. Defelipe et al., BIAS-TEMPERATURE STABILITY OF THE CU(MG) SIO2/P-SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1987-1989
MULTILEVEL INTERCONNECTIONS FOR ULSI AND GSI ERA
Authors: MURARKA SP
Citation: Sp. Murarka, MULTILEVEL INTERCONNECTIONS FOR ULSI AND GSI ERA, Materials science & engineering. R, Reports, 19(3-4), 1997, pp. 87-151
CHEMICAL-MECHANICAL POLISHING OF PARYLENE-N FILMS - EVALUATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY
Authors: YANG GR ZHAO YP NEIRYNCK JM MURARKA SP GUTMANN RJ
Citation: Gr. Yang et al., CHEMICAL-MECHANICAL POLISHING OF PARYLENE-N FILMS - EVALUATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY, Journal of electronic materials, 26(8), 1997, pp. 935-940
ADVANCED MATERIALS FOR FUTURE INTERCONNECTIONS OF THE FUTURE NEED ANDSTRATEGY (INVITED LECTURE)
Authors: MURARKA SP
Citation: Sp. Murarka, ADVANCED MATERIALS FOR FUTURE INTERCONNECTIONS OF THE FUTURE NEED ANDSTRATEGY (INVITED LECTURE), Microelectronic engineering, 37-8(1-4), 1997, pp. 29-37
DAMASCENE COPPER INTERCONNECTS WITH POLYMER ILDS
Authors: PRICE DT GUTMANN RJ MURARKA SP
Citation: Dt. Price et al., DAMASCENE COPPER INTERCONNECTS WITH POLYMER ILDS, Thin solid films, 308, 1997, pp. 523-528
TEXTURE ANALYSIS OF COGE2 ALLOY-FILMS GROWN HETEROEPITAXIALLY ON GAAS(100) USING PARTIALLY-IONIZED BEAM DEPOSITION
Authors: MELLO KE MURARKA SP LU TM LEE SL
Citation: Ke. Mello et al., TEXTURE ANALYSIS OF COGE2 ALLOY-FILMS GROWN HETEROEPITAXIALLY ON GAAS(100) USING PARTIALLY-IONIZED BEAM DEPOSITION, Journal of applied physics, 81(11), 1997, pp. 7261-7267
CHEMICAL-MECHANICAL POLISHING OF PARYLENE-N AND BENZOCYCLOBUTENE FILMS
Authors: YANG GR ZHAO YP NEIRYNCK JM MURARKA SP GUTMANN RJ
Citation: Gr. Yang et al., CHEMICAL-MECHANICAL POLISHING OF PARYLENE-N AND BENZOCYCLOBUTENE FILMS, Journal of the Electrochemical Society, 144(9), 1997, pp. 3249-3255
ELECTROCHEMICAL EFFECTS IN THE CHEMICAL-MECHANICAL POLISHING OF COPPER FOR INTEGRATED-CIRCUITS
Authors: SAINIO CA DUQUETTE DJ STEIGERWALD J MURARKA SP
Citation: Ca. Sainio et al., ELECTROCHEMICAL EFFECTS IN THE CHEMICAL-MECHANICAL POLISHING OF COPPER FOR INTEGRATED-CIRCUITS, Journal of electronic materials, 25(10), 1996, pp. 1593-1598
PASSIVATION OF COPPER BY LOW-TEMPERATURE ANNEALING OF CU MG/SIO2 BILAYERS/
Authors: WANG W DING PJ HYMES S MURARKA SP LANFORD WA
Citation: W. Wang et al., PASSIVATION OF COPPER BY LOW-TEMPERATURE ANNEALING OF CU MG/SIO2 BILAYERS/, Chemical engineering communications, 153, 1996, pp. 253-259
THE ADDITION OF SURFACTANT TO SLURRY FOR POLYMER CMP - EFFECTS ON POLYMER SURFACE, REMOVAL RATE AND UNDERLYING CU
Authors: NEIRYNCK JM YANG GR MURARKA SP GUTMANN RJ
Citation: Jm. Neirynck et al., THE ADDITION OF SURFACTANT TO SLURRY FOR POLYMER CMP - EFFECTS ON POLYMER SURFACE, REMOVAL RATE AND UNDERLYING CU, Thin solid films, 291, 1996, pp. 447-452
LOW DIELECTRIC-CONSTANT MATERIALS FOR INTERLAYER DIELECTRIC APPLICATIONS
Authors: MURARKA SP
Citation: Sp. Murarka, LOW DIELECTRIC-CONSTANT MATERIALS FOR INTERLAYER DIELECTRIC APPLICATIONS, Solid state technology, 39(3), 1996, pp. 83
EPITAXIAL QUALITY OF THIN AG FILMS ON GAAS(100) SURFACES CLEANED WITHVARIOUS WET ETCHING TECHNIQUES
Authors: MELLO KE SOSS SR MURARKA SP LU TM LEE SL
Citation: Ke. Mello et al., EPITAXIAL QUALITY OF THIN AG FILMS ON GAAS(100) SURFACES CLEANED WITHVARIOUS WET ETCHING TECHNIQUES, Applied physics letters, 68(5), 1996, pp. 681-683
LOW-TEMPERATURE EPITAXIAL-GROWTH OF COGE2(001) GAAS(100) FILMS USING THE PARTIALLY-IONIZED BEAM DEPOSITION TECHNIQUE/
Authors: MELLO KE SOSS SR MURARKA SP LU TM LEE SL
Citation: Ke. Mello et al., LOW-TEMPERATURE EPITAXIAL-GROWTH OF COGE2(001) GAAS(100) FILMS USING THE PARTIALLY-IONIZED BEAM DEPOSITION TECHNIQUE/, Applied physics letters, 68(13), 1996, pp. 1817-1819
COMPLETELY PASSIVATED HIGH-CONDUCTIVITY COPPER-FILMS MADE BY ANNEALING CU AL BILAYERS/
Authors: WANG W LANFORD WA MURARKA SP
Citation: W. Wang et al., COMPLETELY PASSIVATED HIGH-CONDUCTIVITY COPPER-FILMS MADE BY ANNEALING CU AL BILAYERS/, Applied physics letters, 68(12), 1996, pp. 1622-1624
MECHANISMS OF COPPER REMOVAL DURING CHEMICAL-MECHANICAL POLISHING
Authors: STEIGERWALD JM MURARKA SP HO J GUTMANN RJ DUQUETTE DJ
Citation: Jm. Steigerwald et al., MECHANISMS OF COPPER REMOVAL DURING CHEMICAL-MECHANICAL POLISHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2215-2218
COPPER METALLIZATION FOR ULSI AND BEYOND
Authors: MURARKA SP HYMES SW
Citation: Sp. Murarka et Sw. Hymes, COPPER METALLIZATION FOR ULSI AND BEYOND, Critical reviews in solid state and materials sciences, 20(2), 1995, pp. 87-124
SILICIDE THIN-FILMS AND THEIR APPLICATIONS IN MICROELECTRONICS
Authors: MURARKA SP
Citation: Sp. Murarka, SILICIDE THIN-FILMS AND THEIR APPLICATIONS IN MICROELECTRONICS, Intermetallics, 3(3), 1995, pp. 173-186
COPPER METALLIZATION FOR FUTURE VLSI - PREFACE
Authors: MURARKA SP GUTMANN RJ
Citation: Sp. Murarka et Rj. Gutmann, COPPER METALLIZATION FOR FUTURE VLSI - PREFACE, Materials chemistry and physics, 41(3), 1995, pp. 159-160
IN-SITU QUADRUPOLE MASS-SPECTROSCOPY STUDIES OF WATER AND SOLVENT COORDINATION TO COPPER(II) BETA-DIKETONATE PRECURSORS - IMPLICATIONS FOR THE CHEMICAL-VAPOR-DEPOSITION OF COPPER
Authors: ZHENG B GOLDBERG C EISENBRAUN ET LIU J KALOYEROS AE TOSCANO PJ MURARKA SP LOAN JF SULLIVAN J
Citation: B. Zheng et al., IN-SITU QUADRUPOLE MASS-SPECTROSCOPY STUDIES OF WATER AND SOLVENT COORDINATION TO COPPER(II) BETA-DIKETONATE PRECURSORS - IMPLICATIONS FOR THE CHEMICAL-VAPOR-DEPOSITION OF COPPER, Materials chemistry and physics, 41(3), 1995, pp. 173-181
ALLOYING OF COPPER FOR USE IN MICROELECTRONIC METALLIZATION
Authors: LANFORD WA DING PJ WANG W HYMES S MURARKA SP
Citation: Wa. Lanford et al., ALLOYING OF COPPER FOR USE IN MICROELECTRONIC METALLIZATION, Materials chemistry and physics, 41(3), 1995, pp. 192-198
CHEMICAL PROCESSES IN THE CHEMICAL-MECHANICAL POLISHING OF COPPER
Authors: STEIGERWALD JM MURARKA SP GUTMANN RJ DUQUETTE DJ
Citation: Jm. Steigerwald et al., CHEMICAL PROCESSES IN THE CHEMICAL-MECHANICAL POLISHING OF COPPER, Materials chemistry and physics, 41(3), 1995, pp. 217-228
Risultati: 1-25 | 26-44