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Results: 1-12 |
Results: 12
DIAMAGNETIC FIELDS DUE TO FINITE-DIMENSION INTENSE BEAMS IN HIGH-GAINFREE-ELECTRON LASERS
Authors: ROSENZWEIG JB MUSUMECI P
Citation: Jb. Rosenzweig et P. Musumeci, DIAMAGNETIC FIELDS DUE TO FINITE-DIMENSION INTENSE BEAMS IN HIGH-GAINFREE-ELECTRON LASERS, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 58(3), 1998, pp. 2737-2740
RELAXATION PHENOMENA IN KEV-ION IMPLANTED HYDROGENATED AMORPHOUS-SILICON CARBIDE
Authors: MUSUMECI P CALCAGNO L MAKHTARI A
Citation: P. Musumeci et al., RELAXATION PHENOMENA IN KEV-ION IMPLANTED HYDROGENATED AMORPHOUS-SILICON CARBIDE, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 296-300
RELAXATION AND CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE PROBED BYOPTICAL MEASUREMENTS
Authors: MUSUMECI P REITANO R CALCAGNO L ROCCAFORTE F MAKHTARI A GRIMALDI MG
Citation: P. Musumeci et al., RELAXATION AND CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE PROBED BYOPTICAL MEASUREMENTS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 323-333
DEFECT ANNEALING IN ION-IMPLANTED SILICON-CARBIDE
Authors: CALCAGNO L GRIMALDI MG MUSUMECI P
Citation: L. Calcagno et al., DEFECT ANNEALING IN ION-IMPLANTED SILICON-CARBIDE, Journal of materials research, 12(7), 1997, pp. 1727-1733
OPTICAL TRANSIENT IN ION-IRRADIATED SILICON-CARBIDE
Authors: MUSUMECI P GRIMALDI MG CALCAGNO L ROCCAFORTE F FOTI G
Citation: P. Musumeci et al., OPTICAL TRANSIENT IN ION-IRRADIATED SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 360-363
AMORPHIZATION AND DEFECT RECOMBINATION IN ION-IMPLANTED SILICON-CARBIDE
Authors: GRIMALDI MG CALCAGNO L MUSUMECI P FRANGIS N VANLANDUYT J
Citation: Mg. Grimaldi et al., AMORPHIZATION AND DEFECT RECOMBINATION IN ION-IMPLANTED SILICON-CARBIDE, Journal of applied physics, 81(11), 1997, pp. 7181-7185
CARBON CLUSTERING IN SI1-XCX FORMED BY ION-IMPLANTATION
Authors: CALCAGNO L COMPAGNINI G FOTI G GRIMALDI MG MUSUMECI P
Citation: L. Calcagno et al., CARBON CLUSTERING IN SI1-XCX FORMED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 121-124
OPTICAL DEFECTS IN ION DAMAGED 6H-SILICON CARBIDE
Authors: MUSUMECI P CALCAGNO L GRIMALDI MG FOTI G
Citation: P. Musumeci et al., OPTICAL DEFECTS IN ION DAMAGED 6H-SILICON CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 327-331
OPTICAL-PROPERTIES OF DEFECTS IN ION-IMPLANTED SILICON-CARBIDE PROBEDAT LAMBDA=633 NM
Authors: MUSUMECI P CALCAGNO L GRIMALDI MG FOTI G
Citation: P. Musumeci et al., OPTICAL-PROPERTIES OF DEFECTS IN ION-IMPLANTED SILICON-CARBIDE PROBEDAT LAMBDA=633 NM, Applied physics letters, 69(4), 1996, pp. 468-470
GRAFTING OF STYRENE IN POLYVINYLIDENE FLUORIDE BY HIGH-ENERGY ION IRRADIATION
Authors: PERCOLLA R MUSUMECI P CALCAGNO L FOTI G CIAVOLA G
Citation: R. Percolla et al., GRAFTING OF STYRENE IN POLYVINYLIDENE FLUORIDE BY HIGH-ENERGY ION IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 105(1-4), 1995, pp. 181-185
HIGH-ENERGY-ION DAMAGE IN SEMICRYSTALLINE POLYVINYLIDENE FLUORIDE
Authors: MUSUMECI P CALCAGNO L PERCOLLA R FOTI G
Citation: P. Musumeci et al., HIGH-ENERGY-ION DAMAGE IN SEMICRYSTALLINE POLYVINYLIDENE FLUORIDE, Journal of applied physics, 77(8), 1995, pp. 3766-3773
CALORIMETRIC MEASUREMENTS OF MEV ION-IRRADIATED POLYVINYLIDENE FLUORIDE
Authors: CALCAGNO L MUSUMECI P PERCOLLA R FOTI G
Citation: L. Calcagno et al., CALORIMETRIC MEASUREMENTS OF MEV ION-IRRADIATED POLYVINYLIDENE FLUORIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 461-464
Risultati: 1-12 |