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Results:
1-7
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Results: 7
Authors:
ALEXEEV AN
KARPOV SY
MAIOROV MA
MYACHIN VE
POGORELSKY YV
SOKOLOV IA
Citation: An. Alexeev et al., THERMAL ETCHING OF BINARY AND TERNARY III-V COMPOUNDS UNDER VACUUM CONDITIONS, Journal of crystal growth, 166(1-4), 1996, pp. 167-171
Authors:
CHALY VP
DEMIDOV DM
FOKIN GA
KARPOV SY
MYACHIN VE
POGORELSKY YV
RUSANOVICH IY
SHKURKO AP
TERMARTIROSYAN AL
Citation: Vp. Chaly et al., USE OF MOLECULAR-BEAM EPITAXY FOR HIGH-POWER ALGAAS LASER PRODUCTION, Journal of crystal growth, 150(1-4), 1995, pp. 1350-1353
Authors:
KARPOV SY
MYACHIN VE
POGORELSKY YV
Citation: Sy. Karpov et al., TIME-RESOLVED REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF DYNAMICAL SURFACE PROCESSES DURING MOLECULAR-BEAM EPITAXY OF GAAS AND ALAS, Journal of crystal growth, 146(1-4), 1995, pp. 344-348
Authors:
ALEKSEEV AN
KARPOV SY
MYACHIN VE
POGORELSKII YV
RUSANOVICH IY
SOKOLOV IA
FOKIN GA
Citation: An. Alekseev et al., COMPARATIVE-STUDIES OF GAAS(100) SURFACE UNDER STATIC CONDITIONS AND UNDER EPITAXIAL-GROWTH FROM MOLECULAR-BEAMS, Fizika tverdogo tela, 36(8), 1994, pp. 2263-2272
Authors:
CHALY VP
ETINBERG MI
FOKIN GA
KARPOV SY
MYACHIN VE
OSTROVSKY AY
POGORELSKY YV
RUSANOVICH IY
SOKOLOV IA
SHCURKO AP
STRUGOV NA
TERMARTIROSYAN AL
Citation: Vp. Chaly et al., A DEGRADATION RATE STUDY OF MBE-GROWN HIGH-POWER ALGAAS LASER-DIODES, Semiconductor science and technology, 9(4), 1994, pp. 345-348
Authors:
KARPOV SY
KOVALCHUK YV
MYACHIN VE
POGORELSKY YV
Citation: Sy. Karpov et al., NUCLEATION AND GROWTH-KINETICS OF GAAS DURING MOLECULAR-BEAM EPITAXY, Surface science, 314(1), 1994, pp. 79-88
Authors:
KARPOV SY
KOVALCHUK YV
MYACHIN VE
POGORELSKII YV
Citation: Sy. Karpov et al., INSTABILITY OF III-V COMPOUND SURFACES DUE TO LIQUID-PHASE FORMATION, Journal of crystal growth, 129(3-4), 1993, pp. 563-570
Risultati:
1-7
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