Authors:
FOLLSTAEDT DM
MYERS SM
KNAPP JA
DUGGER MT
CHRISTENSON TA
Citation: Dm. Follstaedt et al., MICROSTRUCTURE OF BULK AND ELECTROFORMED NI IMPLANTED WITH TI AND C, Surface & coatings technology, 104, 1998, pp. 40-45
Authors:
KNAPP JA
FOLLSTAEDT DM
MYERS SM
BARBOUR JC
FRIEDMANN TA
AGER JW
MONTEIRO OR
BROWN IG
Citation: Ja. Knapp et al., FINITE-ELEMENT MODELING OF NANOINDENTATION FOR EVALUATING MECHANICAL-PROPERTIES OF MEMS MATERIALS, Surface & coatings technology, 104, 1998, pp. 268-275
Authors:
MYERS SM
KNAPP JA
FOLLSTAEDT DM
DUGGER MT
CHRISTENSON TR
Citation: Sm. Myers et al., STRENGTH AND TRIBOLOGY OF BULK AND ELECTROFORMED NICKEL AMORPHIZED BYIMPLANTATION OF TITANIUM AND CARBON, Surface & coatings technology, 104, 1998, pp. 287-292
Citation: Sm. Myers et Ga. Petersen, TRANSPORT AND REACTIONS OF GOLD IN SILICON-CONTAINING CAVITIES, Physical review. B, Condensed matter, 57(12), 1998, pp. 7015-7026
Authors:
MYERS SM
KNAPP JA
FOLLSTAEDT DM
DUGGER MT
Citation: Sm. Myers et al., MECHANICAL-PROPERTIES OF NICKEL ION-IMPLANTED WITH TITANIUM AND CARBON AND THEIR RELATION TO MICROSTRUCTURE, Journal of applied physics, 83(3), 1998, pp. 1256-1264
Citation: Sa. Mchugo et al., GETTERING OF IRON TO IMPLANTATION-INDUCED CAVITIES AND OXYGEN PRECIPITATES IN SILICON, Journal of the Electrochemical Society, 145(4), 1998, pp. 1400-1405
Authors:
MYERS SM
PETERSEN GA
HEADLEY TJ
MICHAEL JR
ASELAGE TL
SEAGER CH
Citation: Sm. Myers et al., METAL GETTERING BY BORON-SILICIDE PRECIPITATES IN BORON-IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 291-296
Citation: Ga. Petersen et al., GETTERING OF TRANSITION-METALS BY CAVITIES IN SILICON FORMED BY HELIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 301-306
Citation: Dm. Follstaedt et al., INTERACTION OF CAVITIES WITH MISFIT DISLOCATIONS IN SIGE SI HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 375-378
Authors:
KNAPP JA
FOLLSTAEDT DM
BARBOUR JC
MYERS SM
Citation: Ja. Knapp et al., FINITE-ELEMENT MODELING OF NANOINDENTATION FOR DETERMINING THE MECHANICAL-PROPERTIES OF IMPLANTED LAYERS AND THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 935-939
Authors:
MARTENS LS
IVANCHUK SM
MYERS SM
MULLIGAN LM
Citation: Ls. Martens et al., EXPRESSION OF THE RET RECEPTOR COMPLEX GENES GDNFR-ALPHA AND NTNR-ALPHA DURING HUMAN KIDNEY DEVELOPMENT, American journal of human genetics, 61(4), 1997, pp. 905-905
Authors:
GOSLING A
MYERS SM
VONDEIMLING A
MULLIGAN LM
Citation: A. Gosling et al., MUTATION ANALYSIS OF GDNFR-ALPHA IN HIRSCHSPRUNG-DISEASE PATIENTS, American journal of human genetics, 61(4), 1997, pp. 2401-2401
Citation: Sm. Ivanchuk et al., DE-NOVO MUTATION OF GDNF, LIGAND FOR THE RET GDNFR-ALPHA RECEPTOR COMPLEX, IN HIRSCHSPRUNG DISEASE/, Human molecular genetics, 5(12), 1996, pp. 2023-2026
Authors:
DOSTALER SM
ROSS GM
MYERS SM
WEAVER DF
ANANTHANARAYANAN V
RIOPELLE RJ
Citation: Sm. Dostaler et al., CHARACTERIZATION OF A DISTINCTIVE MOTIF OF THE LOW-MOLECULAR-WEIGHT NEUROTROPHIN RECEPTOR THAT MODULATES NGF-MEDIATED NEURITE GROWTH, European journal of neuroscience, 8(5), 1996, pp. 870-879
Authors:
MYERS SM
PETERSEN GA
FOLLSTAEDT DM
HEADLEY TJ
MICHAEL JR
SEAGER CH
Citation: Sm. Myers et al., STRONG SEGREGATION GETTERING OF TRANSITION-METALS BY IMPLANTATION-FORMED CAVITIES AND BORON-SILICIDE PRECIPITATES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 43-50
Authors:
NELSON JS
JONES ED
MYERS SM
FOLLSTAEDT DM
HJALMARSON HP
SCHIRBER JE
SCHNEIDER RP
FOUQUET JE
ROBBINS VM
CAREY KW
Citation: Js. Nelson et al., COMPOSITIONAL DEPENDENCE OF THE LUMINESCENCE OF IN-0.49(ALYGA1-Y)(0.51)P ALLOYS NEAR THE DIRECT-INDIRECT BAND-GAP CROSSOVER, Physical review. B, Condensed matter, 53(23), 1996, pp. 15893-15901