Authors: Ma, TZ Schunk, RW

Citation: Tz. Ma et Rw. Schunk, The effects of multiple propagating plasma patches on the polar thermosphere, J ATMOS S-P, 63(4), 2001, pp. 355-366

Authors: Campbell, SA Ma, TZ Smith, R Gladfelter, WL Chen, F

Citation: Sa. Campbell et al., High mobility HfO2 n- and p-channel transistors, MICROEL ENG, 59(1-4), 2001, pp. 361-365

Authors: Ma, TZ Campbell, SA Smith, R Hoilien, N He, BY Gladfelter, WL Hobbs, C Buchanan, D Taylor, C Gribelyuk, M Tiner, M Coppel, M Lee, JJ

Citation: Tz. Ma et al., Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates, IEEE DEVICE, 48(10), 2001, pp. 2348-2356

Authors: Smith, RC Ma, TZ Hoilien, N Tsung, LY Bevan, MJ Colombo, L Roberts, J Campbell, SA Gladfelter, WL

Citation: Rc. Smith et al., Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide, ADV MAT OPT, 10(3-5), 2000, pp. 105-114

Authors: Smith, RC Hoilien, N Taylor, CJ Ma, TZ Campbell, SA Roberts, JT Copel, M Buchanan, DA Gribelyuk, M Gladfelter, WL

Citation: Rc. Smith et al., Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate, J ELCHEM SO, 147(9), 2000, pp. 3472-3476