Authors: Talalaev, VG Novikov, BV Gobsch, G Goldhahn, R Stein, N Tomm, JW Maassdorf, A Cirlin, GE Petrov, VN Ustinov, VM

Citation: Vg. Talalaev et al., Radiative recombination features of metastable quantum dot array, PHYS ST S-B, 224(1), 2001, pp. 101-105

Authors: Brunner, F Richter, E Bergunde, T Rechenberg, I Bhattacharya, A Maassdorf, A Tomm, JW Kurpas, P Achouche, M Wurfl, J Weyers, M

Citation: F. Brunner et al., Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE, J ELEC MAT, 29(2), 2000, pp. 205-209

Authors: Brunner, F Bergunde, T Richter, E Kurpas, P Achouche, M Maassdorf, A Wurfl, J Weyers, M

Citation: F. Brunner et al., Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor, J CRYST GR, 221, 2000, pp. 53-58

Authors: Tarasov, GG Mazur, YI Zhuchenko, ZY Maassdorf, A Nickel, D Tomm, JW Kissel, H Walther, C Masselink, WT

Citation: Gg. Tarasov et al., Carrier transfer in self-assembled coupled InAs/GaAs quantum dots, J APPL PHYS, 88(12), 2000, pp. 7162-7170