Authors:
Lee, JW
Jeon, MH
Devre, M
Mackenzie, KD
Johnson, D
Sasserath, JN
Pearton, SJ
Ren, F
Shul, RJ
Citation: Jw. Lee et al., Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs, SOL ST ELEC, 45(9), 2001, pp. 1683-1686
Authors:
Kent, DG
Lee, KP
Zhang, AP
Luo, B
Overberg, ME
Abernathy, CR
Ren, F
Mackenzie, KD
Pearton, SJ
Nakagawa, Y
Citation: Dg. Kent et al., Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes, SOL ST ELEC, 45(10), 2001, pp. 1837-1842
Authors:
Lee, JW
Mackenzie, KD
Johnson, D
Sasserath, JN
Pearton, SJ
Ren, F
Citation: Jw. Lee et al., Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition, J ELCHEM SO, 147(4), 2000, pp. 1481-1486
Authors:
Lee, JW
Westerman, R
Mackenzie, KD
Donohue, JF
Johnson, D
Sasserath, JN
Liddane, K
Pearton, SJ
Citation: Jw. Lee et al., 905 nm wavelength laser as a means for in situ end-point detection of dry etching of AlxGa1-xAs on GaAs, EL SOLID ST, 2(12), 1999, pp. 640-641
Authors:
Lee, JW
Mackenzie, KD
Johnson, D
Hahn, YB
Hays, DC
Abernathy, CR
Ren, F
Pearton, SJ
Citation: Jw. Lee et al., Damage to III-V devices during electron cyclotron resonance chemical vapordeposition, J VAC SCI A, 17(4), 1999, pp. 2183-2187