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Results: 1-14 |
Results: 14
Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs
Authors: Lee, JW Jeon, MH Devre, M Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F Shul, RJ
Citation: Jw. Lee et al., Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs, SOL ST ELEC, 45(9), 2001, pp. 1683-1686
Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN
Authors: Kent, DG Lee, KP Zhang, AP Luo, B Overberg, ME Abernathy, CR Ren, F Mackenzie, KD Pearton, SJ Nakagawa, Y
Citation: Dg. Kent et al., Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN, SOL ST ELEC, 45(3), 2001, pp. 467-470
Effects of N-2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolartransistors
Authors: Hsu, CH Chen, CC Luo, B Ren, F Pearton, SJ Abernathy, CR Lee, JW Mackenzie, KD Sasserath, J
Citation: Ch. Hsu et al., Effects of N-2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolartransistors, SOL ST ELEC, 45(2), 2001, pp. 275-279
Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors
Authors: Luo, B Ip, K Ren, F Lee, KP Abernathy, CR Pearton, SJ Mackenzie, KD
Citation: B. Luo et al., Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors, SOL ST ELEC, 45(10), 2001, pp. 1733-1741
Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes
Authors: Kent, DG Lee, KP Zhang, AP Luo, B Overberg, ME Abernathy, CR Ren, F Mackenzie, KD Pearton, SJ Nakagawa, Y
Citation: Dg. Kent et al., Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes, SOL ST ELEC, 45(10), 2001, pp. 1837-1842
Processes and their frameworks
Authors: Mackenzie, KD
Citation: Kd. Mackenzie, Processes and their frameworks, MANAG SCI, 46(1), 2000, pp. 110-125
Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition
Authors: Lee, JW Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F
Citation: Jw. Lee et al., Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition, J ELCHEM SO, 147(4), 2000, pp. 1481-1486
Current topics in management - Introduction
Authors: Rahim, MA Golembiewski, RT Mackenzie, KD
Citation: Ma. Rahim et al., Current topics in management - Introduction, CUR T MANAG, 5, 2000, pp. 1-13
A theory for managing fast-changing organization
Authors: Mackenzie, KD
Citation: Kd. Mackenzie, A theory for managing fast-changing organization, CUR T MANAG, 5, 2000, pp. 17-39
Evolving from data expertise to expert data
Authors: Mackenzie, KD Golembiewski, RT Rahim, MA
Citation: Kd. Mackenzie et al., Evolving from data expertise to expert data, CUR T MANAG, 5, 2000, pp. 357-368
Current topics in management - Preface
Authors: Golembiewski, RT Rahim, MA Mackenzie, KD
Citation: Rt. Golembiewski et al., Current topics in management - Preface, CUR T MANAG, 5, 2000, pp. IX-XIII
905 nm wavelength laser as a means for in situ end-point detection of dry etching of AlxGa1-xAs on GaAs
Authors: Lee, JW Westerman, R Mackenzie, KD Donohue, JF Johnson, D Sasserath, JN Liddane, K Pearton, SJ
Citation: Jw. Lee et al., 905 nm wavelength laser as a means for in situ end-point detection of dry etching of AlxGa1-xAs on GaAs, EL SOLID ST, 2(12), 1999, pp. 640-641
Damage to III-V devices during electron cyclotron resonance chemical vapordeposition
Authors: Lee, JW Mackenzie, KD Johnson, D Hahn, YB Hays, DC Abernathy, CR Ren, F Pearton, SJ
Citation: Jw. Lee et al., Damage to III-V devices during electron cyclotron resonance chemical vapordeposition, J VAC SCI A, 17(4), 1999, pp. 2183-2187
Mechanism of high density plasma processes for ion-driven etching of materials
Authors: Lee, JW Donohue, JF Mackenzie, KD Westerman, R Johnson, D Pearton, SJ
Citation: Jw. Lee et al., Mechanism of high density plasma processes for ion-driven etching of materials, SOL ST ELEC, 43(9), 1999, pp. 1769-1775
Risultati: 1-14 |