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Results: 1-3 |
Results: 3

Authors: Zhang, Q Madangarli, V Tarplee, M Sudarshan, TS
Citation: Q. Zhang et al., Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes, J ELEC MAT, 30(3), 2001, pp. 196-201

Authors: Zhang, Q Madangarli, V Sudarshan, TS
Citation: Q. Zhang et al., SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current, SOL ST ELEC, 45(7), 2001, pp. 1085-1089

Authors: Sudarshan, TS Soloviev, S Khlebnikov, I Madangarli, V
Citation: Ts. Sudarshan et al., Structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation, MAT SCI E B, 61-2, 1999, pp. 464-467
Risultati: 1-3 |