Citation: Q. Zhang et al., SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current, SOL ST ELEC, 45(7), 2001, pp. 1085-1089
Authors:
Sudarshan, TS
Soloviev, S
Khlebnikov, I
Madangarli, V
Citation: Ts. Sudarshan et al., Structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation, MAT SCI E B, 61-2, 1999, pp. 464-467