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Results: 1-10 |
Results: 10
Particularities of the photoluminescence spectra of Cr (4+): Ca2GeO4 single crystal films
Authors: Gorshkov, ON Dianov, EM Zvonkov, NB Kasatkin, AP Lebedev, VF Maksimov, GA Chigineva, AB Chigirinskii, YI
Citation: On. Gorshkov et al., Particularities of the photoluminescence spectra of Cr (4+): Ca2GeO4 single crystal films, TECH PHYS L, 27(9), 2001, pp. 709-711
Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Shengurov, DV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy, SEMICONDUCT, 35(8), 2001, pp. 918-923
The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon, IAN FIZ, 65(2), 2001, pp. 285-288
Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy, IAN FIZ, 65(2), 2001, pp. 289-291
Electron paramagnetic resonance in monoisotope high-purity silicon-28
Authors: Devyatykh, GG Gusev, AV Khokhlov, AF Maksimov, GA Ezhevskii, AA Guseinov, DV Dianov, EM
Citation: Gg. Devyatykh et al., Electron paramagnetic resonance in monoisotope high-purity silicon-28, DOKL PHYS C, 376(1-3), 2001, pp. 8-11
Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy
Authors: Svetlov, SP Chalkov, VY Shengurov, VG Uskova, EA Maksimov, GA Andreev, BA Krasil'nik, ZF Stepikhova, MV Ellmer, H
Citation: Sp. Svetlov et al., Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy, TECH PHYS L, 26(1), 2000, pp. 41-43
Luminescence of Cr4+: Ca2GeO4 films in the near infrared region
Authors: Gorshkov, ON Dianov, EM Zvonkov, NB Maksimov, GA Protopopov, VN Chigirinskii, YI
Citation: On. Gorshkov et al., Luminescence of Cr4+: Ca2GeO4 films in the near infrared region, QUANTUM EL, 30(3), 2000, pp. 261-262
Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
Authors: Zvonkov, NB Akhlestina, SA Ershov, AV Zvonkov, BN Maksimov, GA Uskova, EA
Citation: Nb. Zvonkov et al., Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm, QUANTUM EL, 29(3), 1999, pp. 217-218
Acoustic pulse propagation in a medium with two relaxation processes. Analysis of the exact solution
Authors: Larichev, VA Maksimov, GA
Citation: Va. Larichev et Ga. Maksimov, Acoustic pulse propagation in a medium with two relaxation processes. Analysis of the exact solution, ACOUST PHYS, 45(6), 1999, pp. 762-773
Excitation of a tube wave in a borehole by an external seismic source
Authors: Ionov, AM Maksimov, GA
Citation: Am. Ionov et Ga. Maksimov, Excitation of a tube wave in a borehole by an external seismic source, ACOUST PHYS, 45(3), 1999, pp. 311-319
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