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Results: 1-8 |
Results: 8
Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice
Authors: Mourokh, LG Malikova, L Pollak, FH Shi, BQ Nguyen, C
Citation: Lg. Mourokh et al., Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice, J APPL PHYS, 89(4), 2001, pp. 2500-2502
Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure
Authors: Malikova, L Pollak, FH Gorea, O Korotcov, A
Citation: L. Malikova et al., Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure, J ELEC MAT, 29(11), 2000, pp. 1346-1350
Public administration reform in Slovakia with special reference to local government
Authors: Malikova, L
Citation: L. Malikova, Public administration reform in Slovakia with special reference to local government, SOCIOLOGIA, 32(3), 2000, pp. 273-288
Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence
Authors: Huang, YS Malikova, L Pollak, FH Shen, H Pamulapati, J Newman, P
Citation: Ys. Huang et al., Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence, APPL PHYS L, 77(1), 2000, pp. 37-39
Theory and politics of the reform of public administration (Alternative approaches to the democratisation and innovation)
Authors: Malikova, L
Citation: L. Malikova, Theory and politics of the reform of public administration (Alternative approaches to the democratisation and innovation), SOCIOLOGIA, 31(2), 1999, pp. 159-174
Nondestructive assessment of In-0.48(Ga1-xAlx)(0.52)P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition
Authors: Feng, ZC Armour, E Ferguson, I Stall, RA Holden, T Malikova, L Wan, JZ Pollak, FH Pavlosky, M
Citation: Zc. Feng et al., Nondestructive assessment of In-0.48(Ga1-xAlx)(0.52)P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition, J APPL PHYS, 85(7), 1999, pp. 3824-3831
Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
Authors: Huang, YS Sun, WD Malikova, L Pollak, FH Ferguson, I Hou, H Feng, ZC Ryan, T Fantner, EB
Citation: Ys. Huang et al., Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure, APPL PHYS L, 74(13), 1999, pp. 1851-1853
Franz-Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures
Authors: Huang, YS Sun, WD Malikova, L Pollak, FH Low, TS Chang, JSC
Citation: Ys. Huang et al., Franz-Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures, APPL PHYS L, 73(9), 1998, pp. 1215-1217
Risultati: 1-8 |