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Results:
1-7
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Results: 7
Authors:
Khorenko, VV
Malzer, S
Bock, C
Schmidt, KH
Dohler, GH
Citation: Vv. Khorenko et al., Electroluminescence of self-assembled InAs quantum dots in p-i-n diodes, PHYS ST S-B, 224(1), 2001, pp. 129-132
Authors:
Beck, M
Streb, D
Vitzethum, M
Kiesel, P
Malzer, S
Metzner, C
Dohler, GH
Citation: M. Beck et al., Ambipolar drift of spatially separated electrons and holes - art. no. 085307, PHYS REV B, 6408(8), 2001, pp. 5307
Authors:
Pfeiffer, KFG
Tautz, S
Kiesel, P
Steen, C
Malzer, S
Dohler, GH
Citation: Kfg. Pfeiffer et al., Investigation of deep electronic centers in low-temperature grown GaAs using extremely thin layers, APPL PHYS L, 77(15), 2000, pp. 2349-2351
Authors:
Hauenstein, HM
Seilmeier, A
Geisselbrecht, W
Streb, D
Kiesel, P
Malzer, S
Dohler, GH
Citation: Hm. Hauenstein et al., Speeding-up optical nonlinearities in hetero-n-i-p-i-structures by recombination contacts, PHYSICA B, 272(1-4), 1999, pp. 499-501
Authors:
Soubusta, J
Grill, R
Hlidek, P
Zvara, M
Smrcka, L
Malzer, S
Geisselbrecht, W
Dohler, GH
Citation: J. Soubusta et al., Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field, PHYS REV B, 60(11), 1999, pp. 7740-7743
Authors:
Hilburger, U
Fix, W
Mayer, R
Geisselbrecht, W
Malzer, S
Velling, P
Prost, W
Tegude, FJ
Dohler, GH
Citation: U. Hilburger et al., Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures, J CRYST GR, 202, 1999, pp. 574-577
Authors:
Dohler, GH
Heber, J
Peter, M
Eckl, S
Malzer, S
Forster, A
Luth, H
Citation: Gh. Dohler et al., Hot electrons in n-i-p-i-based devices, S SEMI SCI, 5, 1998, pp. 479-504
Risultati:
1-7
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