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Results: 1-8 |
Results: 8
Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers
Authors: Bewley, WW Vurgaftman, I Bartolo, RE Jurkovic, MJ Felix, CL Meyer, JR Lee, H Martinelli, RU Turner, GW Manfra, MJ
Citation: Ww. Bewley et al., Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers, IEEE S T QU, 7(2), 2001, pp. 96-101
Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures
Authors: Hsu, JWP Manfra, MJ Lang, DV Baldwin, KW Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures, J ELEC MAT, 30(3), 2001, pp. 110-114
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
Authors: Hsu, JWP Manfra, MJ Chu, SNG Chen, CH Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy, APPL PHYS L, 78(25), 2001, pp. 3980-3982
Virtual mesa and spoiler midinfrared angled-grating distributed feedback lasers fabricated by ion bombardment
Authors: Bartolo, RE Bewley, WW Felix, CL Vurgaftman, I Lindle, JR Meyer, JR Knies, DL Grabowski, KS Turner, GW Manfra, MJ
Citation: Re. Bartolo et al., Virtual mesa and spoiler midinfrared angled-grating distributed feedback lasers fabricated by ion bombardment, APPL PHYS L, 78(22), 2001, pp. 3394-3396
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes
Authors: Hsu, JWP Manfra, MJ Lang, DV Richter, S Chu, SNG Sergent, AM Kleiman, RN Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes, APPL PHYS L, 78(12), 2001, pp. 1685-1687
Electron cyclotron resonance plasma etching of GaSb-based alloys
Authors: Ahmad, RU Nagy, G Osgood, RM Turner, GW Manfra, MJ Chludzinski, JW
Citation: Ru. Ahmad et al., Electron cyclotron resonance plasma etching of GaSb-based alloys, APPL PHYS L, 77(7), 2000, pp. 1008-1010
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
Authors: Manfra, MJ Pfeiffer, LN West, KW Stormer, HL Baldwin, KW Hsu, JWP Lang, DV Molnar, RJ
Citation: Mj. Manfra et al., High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy, APPL PHYS L, 77(18), 2000, pp. 2888-2890
High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 mu m
Authors: Walpole, JN Choi, HK Missaggia, LJ Liau, ZL Connors, MK Turner, GW Manfra, MJ Cook, CC
Citation: Jn. Walpole et al., High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 mu m, IEEE PHOTON, 11(10), 1999, pp. 1223-1225
Risultati: 1-8 |