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Results: 1-22 |
Results: 22
Death without notice
Authors: Marchand, H
Citation: H. Marchand, Death without notice, AM J HEAL B, 25(4), 2001, pp. 428-428
Earth rising: American environmentalism in the 21(st) century
Authors: Marchand, H
Citation: H. Marchand, Earth rising: American environmentalism in the 21(st) century, AM J HEAL B, 25(2), 2001, pp. 157-158
Formal verification of programs specified with signal: application to a power transformer station controller
Authors: Marchand, H Rutten, E Le Borgne, M Samaan, M
Citation: H. Marchand et al., Formal verification of programs specified with signal: application to a power transformer station controller, SCI COMP PR, 41(1), 2001, pp. 85-104
Aggregation and mixed integer rounding to solve mips
Authors: Marchand, H Wolsey, LA
Citation: H. Marchand et La. Wolsey, Aggregation and mixed integer rounding to solve mips, OPERAT RES, 49(3), 2001, pp. 363-371
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
Authors: Marchand, H Zhao, L Zhang, N Moran, B Coffie, R Mishra, UK Speck, JS DenBaars, SP Freitas, JA
Citation: H. Marchand et al., Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors, J APPL PHYS, 89(12), 2001, pp. 7846-7851
Monolithic chemical sensor using heterodyned sampled grating DBR lasers
Authors: Cohen, DA Skogen, EJ Marchand, H Coldren, LA
Citation: Da. Cohen et al., Monolithic chemical sensor using heterodyned sampled grating DBR lasers, ELECTR LETT, 37(22), 2001, pp. 1358-1360
Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction
Authors: Zhao, L Marchand, H Fini, P Denbaars, SP Mishra, UK Speck, JS
Citation: L. Zhao et al., Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction, MRS I J N S, 5, 2000, pp. NIL_94-NIL_99
Initial steps of ligand-promoted dissolution of gibbsite
Authors: Molis, E Barres, O Marchand, H Sauzeat, E Humbert, B Thomas, F
Citation: E. Molis et al., Initial steps of ligand-promoted dissolution of gibbsite, COLL SURF A, 163(2-3), 2000, pp. 283-292
Synthesis of discrete-event controllers based on the signal environment
Authors: Marchand, H Bournai, P Le Borgne, M Le Guernic, P
Citation: H. Marchand et al., Synthesis of discrete-event controllers based on the signal environment, DISCR EVENT, 10(4), 2000, pp. 325-346
On the synthesis of optimal schedulers in discrete event control problems with multiple goals
Authors: Marchand, H Boivineau, O Lafortune, S
Citation: H. Marchand et al., On the synthesis of optimal schedulers in discrete event control problems with multiple goals, SIAM J CON, 39(2), 2000, pp. 512-532
Incremental design of a power transformer station controller using a controller synthesis methodology
Authors: Marchand, H Samaan, M
Citation: H. Marchand et M. Samaan, Incremental design of a power transformer station controller using a controller synthesis methodology, IEEE SOFT E, 26(8), 2000, pp. 729-741
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
Authors: Fini, P Marchand, H Ibbetson, JP DenBaars, SP Mishra, UK Speck, JS
Citation: P. Fini et al., Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction, J CRYST GR, 209(4), 2000, pp. 581-590
Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001)
Authors: Beaudoin, M Desjardins, P Ait-Ouali, A Brebner, JL Yip, RYF Marchand, H Isnard, L Masut, RA
Citation: M. Beaudoin et al., Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001), J APPL PHYS, 87(5), 2000, pp. 2320-2326
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
Authors: Stonas, AR Kozodoy, P Marchand, H Fini, P DenBaars, SP Mishra, UK Hu, EL
Citation: Ar. Stonas et al., Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures, APPL PHYS L, 77(16), 2000, pp. 2610-2612
bc-opt: a branch-and-cut code for mixed integer programs
Authors: Cordier, C Marchand, H Laundy, R Wolsey, LA
Citation: C. Cordier et al., bc-opt: a branch-and-cut code for mixed integer programs, MATH PROGR, 86(2), 1999, pp. 335-353
The 0-1 Knapsack problem with a single continuous variable
Authors: Marchand, H Wolsey, LA
Citation: H. Marchand et La. Wolsey, The 0-1 Knapsack problem with a single continuous variable, MATH PROGR, 85(1), 1999, pp. 15-33
Thermal conductivity of lateral epitaxial overgrown GaN films
Authors: Luo, CY Marchand, H Clarke, DR DenBaars, SP
Citation: Cy. Luo et al., Thermal conductivity of lateral epitaxial overgrown GaN films, APPL PHYS L, 75(26), 1999, pp. 4151-4153
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN
Authors: Parish, G Keller, S Kozodoy, P Ibbetson, JP Marchand, H Fini, PT Fleischer, SB DenBaars, SP Mishra, UK Tarsa, EJ
Citation: G. Parish et al., High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN, APPL PHYS L, 75(2), 1999, pp. 247-249
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
Authors: Fini, P Zhao, L Moran, B Hansen, M Marchand, H Ibbetson, JP DenBaars, SP Mishra, UK Speck, JS
Citation: P. Fini et al., High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers, APPL PHYS L, 75(12), 1999, pp. 1706-1708
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
Authors: Rosner, SJ Girolami, G Marchand, H Fini, PT Ibbetson, JP Zhao, L Keller, S Mishra, UK DenBaars, SP Speck, JS
Citation: Sj. Rosner et al., Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride, APPL PHYS L, 74(14), 1999, pp. 2035-2037
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Authors: Chichibu, SF Marchand, H Minsky, MS Keller, S Fini, PT Ibbetson, JP Fleischer, SB Speck, JS Bowers, JE Hu, E Mishra, UK DenBaars, SP Deguchi, T Soto, T Nakamura, S
Citation: Sf. Chichibu et al., Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth, APPL PHYS L, 74(10), 1999, pp. 1460-1462
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
Authors: Marchand, H Ibbetson, JP Fini, PT Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: H. Marchand et al., Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 328-332
Risultati: 1-22 |