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Results: 5

Authors: Kaneko, Y Nakagawa, S Ichimura, Y Yamada, N Mars, DE Takeuchi, T
Citation: Y. Kaneko et al., Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311)B and (411)A GaAs substrates, J APPL PHYS, 87(4), 2000, pp. 1597-1603

Authors: Perlin, P Wisniewski, P Skierbiszewski, C Suski, T Kaminska, E Subramanya, SG Weber, ER Mars, DE Walukiewicz, W
Citation: P. Perlin et al., Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01, APPL PHYS L, 76(10), 2000, pp. 1279-1281

Authors: Kaneko, Y Mars, DE Nakagawa, S Ichimura, Y Yamada, N
Citation: Y. Kaneko et al., Vertical-cavity surface-emitting lasers with stable polarization grown on (411)A-oriented GaAs substrates, JPN J A P 2, 38(8A), 1999, pp. L864-L866

Authors: Mars, DE Babic, DI Kaneko, Y Chang, YL Subramanya, S Kruger, J Perlin, P Weber, ER
Citation: De. Mars et al., Growth of 1.3 mu m InGaAsN laser material on GaAs by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1272-1275

Authors: Perlin, P Subramanya, SG Mars, DE Kruger, J Shapiro, NA Siegle, H Weber, ER
Citation: P. Perlin et al., Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer, APPL PHYS L, 73(25), 1998, pp. 3703-3705
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