AAAAAA

   
Results: 1-7 |
Results: 7
Large current radiator with S-diode switch
Authors: Pochanin, GP Kholod, PV Masalov, SA
Citation: Gp. Pochanin et al., Large current radiator with S-diode switch, IEEE ELMAGN, 43(1), 2001, pp. 94-100
Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface
Authors: Tsyrlin, GE Samsonenko, YB Petrov, VN Polyakov, NK Egorov, VA Masalov, SA Gorbenko, OM Golubok, AO Soshnikov, IP Ustinov, VM
Citation: Ge. Tsyrlin et al., Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface, TECH PHYS L, 26(9), 2000, pp. 781-784
Scanning tunneling microscopy of films of amorphous carbon doped with copper
Authors: Golubok, AO Gorbenko, OM Zvonareva, TK Masalov, SA Rozanov, VV Yastrebov, SG Ivanov-Omskii, VI
Citation: Ao. Golubok et al., Scanning tunneling microscopy of films of amorphous carbon doped with copper, SEMICONDUCT, 34(2), 2000, pp. 217-220
Effect of growth conditions on the formation of InAs quantum dots on Si(100)
Authors: Cirlin, GE Polyakov, NK Petrov, VN Samsonenko, YB Masalov, SA Golubok, AO Ledentsov, NN Bimberg, D Denisov, DV Busov, VM Ustinov, VM Alferov, ZI
Citation: Ge. Cirlin et al., Effect of growth conditions on the formation of InAs quantum dots on Si(100), IAN FIZ, 64(2), 2000, pp. 344-347
Heteroepitaxial growth of InAs on Si: a new type of quantum dot
Authors: Cyrlin, GE Petrov, VN Dubrovskii, VG Samsonenko, YB Polyakov, NK Golubok, AO Masalov, SA Komyak, NI Ustinov, VM Egorov, AY Kovsh, AR Maximov, MV Tsatsul'nikov, AF Volovik, BV Zhukov, AE Kop'ev, PS Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Ge. Cyrlin et al., Heteroepitaxial growth of InAs on Si: a new type of quantum dot, SEMICONDUCT, 33(9), 1999, pp. 972-975
Self-organization of quantum dots in multilayer InAs GaAs and InGaAs GaAs structures in submonolayer epitaxy
Authors: Tsyrlin, GE Petrov, VN Masalov, SA Golubok, AO
Citation: Ge. Tsyrlin et al., Self-organization of quantum dots in multilayer InAs GaAs and InGaAs GaAs structures in submonolayer epitaxy, SEMICONDUCT, 33(6), 1999, pp. 677-680
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
Authors: Tsirlin, GE Petrov, VN Polyakov, NK Masalov, SA Golubok, AO Denisov, DV Kudryavtsev, YA Ber, BY Ustinov, VM
Citation: Ge. Tsirlin et al., Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic, SEMICONDUCT, 33(10), 1999, pp. 1054-1058
Risultati: 1-7 |