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Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz
Authors:
Lee, M Massey, JC Nguyen, VL Shklovskii, BI
Citation:
M. Lee et al., Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz, PHYS REV B, 60(3), 1999, pp. 1582-1591
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