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Results: 1-9 |
Results: 9
Expression of ICAD-L and ICAD-S in human brain tumor and its cleavage uponactivation of apoptosis by anti-Fas antibody
Authors: Masuoka, F Shiraishi, T Ichinose, M Mineta, T Tabuchi, K
Citation: F. Masuoka et al., Expression of ICAD-L and ICAD-S in human brain tumor and its cleavage uponactivation of apoptosis by anti-Fas antibody, JPN J CANC, 92(7), 2001, pp. 806-812
2.4F(2) memory cell technology with stacked-surrounding gate transistor (S-SGT) DRAM
Authors: Endoh, T Suzuki, M Sakuraba, H Masuoka, F
Citation: T. Endoh et al., 2.4F(2) memory cell technology with stacked-surrounding gate transistor (S-SGT) DRAM, IEEE DEVICE, 48(8), 2001, pp. 1599-1603
0.18-mu m CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation
Authors: Tanabe, A Umetani, M Fujiwara, I Ogura, T Kataoka, K Okihara, M Sakuraba, H Endoh, T Masuoka, F
Citation: A. Tanabe et al., 0.18-mu m CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation, IEEE J SOLI, 36(6), 2001, pp. 988-996
An on-chip 96.5% current efficiency CMOS linear regulator using a flexiblecontrol technique of output current
Authors: Endoh, T Sunaga, K Sakuraba, H Masuoka, F
Citation: T. Endoh et al., An on-chip 96.5% current efficiency CMOS linear regulator using a flexiblecontrol technique of output current, IEEE J SOLI, 36(1), 2001, pp. 34-39
Analytical modeling of stress-induced leakage currents in 5.1-9.6-nm-thicksilicon-dioxide films based on two-step inelastic trap-assisted tunneling
Authors: Lenski, M Endoh, T Masuoka, F
Citation: M. Lenski et al., Analytical modeling of stress-induced leakage currents in 5.1-9.6-nm-thicksilicon-dioxide films based on two-step inelastic trap-assisted tunneling, J APPL PHYS, 88(9), 2000, pp. 5238-5245
A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films
Authors: Endoh, T Chiba, T Sakuraba, H Lenski, M Masuoka, F
Citation: T. Endoh et al., A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films, J APPL PHYS, 86(4), 1999, pp. 2095-2099
New three-dimensional memory array architecture for future ultrahigh-density DRAM
Authors: Endoh, T Shinmei, K Sakuraba, H Masuoka, F
Citation: T. Endoh et al., New three-dimensional memory array architecture for future ultrahigh-density DRAM, IEEE J SOLI, 34(4), 1999, pp. 476-483
Influence of retarding hydrogen diffusion in boron phosphosilicate glass on annealing damage of metal-oxide semiconductor transistors
Authors: Yamaha, T Masuoka, F
Citation: T. Yamaha et F. Masuoka, Influence of retarding hydrogen diffusion in boron phosphosilicate glass on annealing damage of metal-oxide semiconductor transistors, J ELCHEM SO, 146(8), 1999, pp. 3065-3069
A high performance voltage down converter (VDC) using new flexible controltechnology of driving current
Authors: Endoh, T Nakamura, K Masuoka, F
Citation: T. Endoh et al., A high performance voltage down converter (VDC) using new flexible controltechnology of driving current, IEICE TR EL, E81C(12), 1998, pp. 1905-1912
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