ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states

Authors: Paki, P Leonelli, R Isnard, L Masut, RA

Citation: P. Paki et al., Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states, J VAC SCI A, 18(3), 2000, pp. 956-959

Temperature determination in optoelectronic waveguide modulators

Authors: Allard, M Masut, RA Boudreau, M

Citation: M. Allard et al., Temperature determination in optoelectronic waveguide modulators, J LIGHTW T, 18(6), 2000, pp. 813-818

Epitaxial metastable Ge1-yCy (y <= 0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites

Authors: D'Arcy-Gall, J Desjardins, P Petrov, I Greene, JE Paultre, JE Masut, RA Gujrathi, SC Roorda, S

Citation: J. D'Arcy-gall et al., Epitaxial metastable Ge1-yCy (y <= 0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites, J APPL PHYS, 88(1), 2000, pp. 96-104

Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001)

Authors: Beaudoin, M Desjardins, P Ait-Ouali, A Brebner, JL Yip, RYF Marchand, H Isnard, L Masut, RA

Citation: M. Beaudoin et al., Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001), J APPL PHYS, 87(5), 2000, pp. 2320-2326

Optical and structural properties of InAsP/(Ga)InP multilayers on InP(001): Strained-layer multiple quantum well structures and devices

Authors: Beaudoin, M Desjardins, P Yip, RYF Masut, RA

Citation: M. Beaudoin et al., Optical and structural properties of InAsP/(Ga)InP multilayers on InP(001): Strained-layer multiple quantum well structures and devices, OPTOEL PROP, 9, 2000, pp. 381-458

Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces

Authors: Paki, P Leonelli, R Isnard, L Masut, RA

Citation: P. Paki et al., Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces, J APPL PHYS, 86(12), 1999, pp. 6789-6792

Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells

Authors: Ait-Ouali, A Brebner, JL Yip, RYF Masut, RA

Citation: A. Ait-ouali et al., Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells, J APPL PHYS, 86(12), 1999, pp. 6803-6809

Simultaneous analysis of current-voltage and capacitance-voltage characteristics of metal-insulator-semiconductor diodes with a high mid-gap trap density

Authors: Cova, P Singh, A Masut, RA

Citation: P. Cova et al., Simultaneous analysis of current-voltage and capacitance-voltage characteristics of metal-insulator-semiconductor diodes with a high mid-gap trap density, J APPL PHYS, 85(9), 1999, pp. 6530-6538

Exciton resonances in ultrathin InAs/InP quantum wells

Authors: Paki, P Leonelli, R Isnard, L Masut, RA

Citation: P. Paki et al., Exciton resonances in ultrathin InAs/InP quantum wells, APPL PHYS L, 74(10), 1999, pp. 1445-1447

Risultati: 1-9 |