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Citation: Ip. Smorchkova et al., AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grownby plasma-assisted molecular-beam epitaxy, J APPL PHYS, 90(10), 2001, pp. 5196-5201

Authors: Kocka, J Stuchlik, J Stuchlikova, H Svrcek, V Fojtik, P Mates, T Luterova, K Fejfar, A

Citation: J. Kocka et al., Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties, APPL PHYS L, 79(16), 2001, pp. 2540-2542

Authors: Elsass, CR Mates, T Heying, B Poblenz, C Fini, P Petroff, PM DenBaars, SP Speck, JS

Citation: Cr. Elsass et al., Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy, APPL PHYS L, 77(20), 2000, pp. 3167-3169