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Results:
1-8
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Results: 8
Authors:
Bolognesi, CR
Matine, N
Dvorak, MW
Yeo, P
Xu, XG
Watkins, SP
Citation: Cr. Bolognesi et al., InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHB, IEEE DEVICE, 48(11), 2001, pp. 2631-2639
Authors:
Dvorak, MW
Matine, N
Bolognesi, CR
Xu, XG
Watkins, SP
Citation: Mw. Dvorak et al., Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors, J VAC SCI A, 18(2), 2000, pp. 761-764
Authors:
Watkins, SP
Pitts, OJ
Dale, C
Xu, XG
Dvorak, MW
Matine, N
Bolognesi, CR
Citation: Sp. Watkins et al., Heavily carbon-doped GaAsSb grown on InP for HBT applications, J CRYST GR, 221, 2000, pp. 59-65
Authors:
Matine, N
Dvorak, MW
Pelouard, JL
Pardo, F
Bolognesi, CR
Citation: N. Matine et al., Fabrication and characterization of InP heterojunction bipolar transistorswith emitter edges parallel to [001] and [010] crystal orientations, JPN J A P 1, 38(2B), 1999, pp. 1200-1203
Authors:
Bolognesi, CR
Matine, N
Dvorak, MW
Xu, XG
Hu, J
Watkins, SP
Citation: Cr. Bolognesi et al., Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction, IEEE ELEC D, 20(4), 1999, pp. 155-157
Authors:
Bolognesi, CR
Matine, N
Xu, XG
Soerensen, G
Watkins, SP
Citation: Cr. Bolognesi et al., InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: preliminary reliability study, MICROEL REL, 39(12), 1999, pp. 1833-1838
Authors:
Matine, N
Soerensen, G
Bolognesi, CR
DiSanto, D
Xu, X
Watkins, SP
Citation: N. Matine et al., Electrical stress damage reversal in nonpassivated fully self-aligned InPHBTs by ozone surface treatment, ELECTR LETT, 35(25), 1999, pp. 2229-2231
Authors:
Xu, XG
Hu, J
Watkins, SP
Matine, N
Dvorak, MW
Bolognesi, CR
Citation: Xg. Xu et al., Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors, APPL PHYS L, 74(7), 1999, pp. 976-978
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1-8
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