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Results: 1-9 |
Results: 9
High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)
Authors: Standaert, TEFM Matsuo, PJ Li, X Oehrlein, GS Lu, TM Gutmann, R Rosenmayer, CT Bartz, JW Langan, JG Entley, WR
Citation: Tefm. Standaert et al., High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether), J VAC SCI A, 19(2), 2001, pp. 435-446
Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas
Authors: Kastenmeier, BEE Matsuo, PJ Oehrlein, GS Ellefson, RE Frees, LC
Citation: Bee. Kastenmeier et al., Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas, J VAC SCI A, 19(1), 2001, pp. 25-30
Pattern transfer into low dielectric constant materials by high-density plasma etching
Authors: Oehrlein, GS Standaert, TEFM Matsuo, PJ
Citation: Gs. Oehrlein et al., Pattern transfer into low dielectric constant materials by high-density plasma etching, SOL ST TECH, 43(5), 2000, pp. 125
Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch
Authors: Matsuo, PJ Standaert, TEFM Allen, SD Oehrlein, GS Dalton, TJ
Citation: Pj. Matsuo et al., Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch, J VAC SCI B, 17(4), 1999, pp. 1435-1447
Highly selective etching of silicon nitride over silicon and silicon dioxide
Authors: Kastenmeier, BEE Matsuo, PJ Oehrlein, GS
Citation: Bee. Kastenmeier et al., Highly selective etching of silicon nitride over silicon and silicon dioxide, J VAC SCI A, 17(6), 1999, pp. 3179-3184
Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing
Authors: Schaepkens, M Rueger, NR Beulens, JJ Li, X Standaert, TEFM Matsuo, PJ Oehrlein, GS
Citation: M. Schaepkens et al., Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing, J VAC SCI A, 17(6), 1999, pp. 3272-3280
Silicon etching in NF3/O-2 remote microwave plasmas
Authors: Matsuo, PJ Kastenmeier, BEE Oehrlein, GS Langan, JG
Citation: Pj. Matsuo et al., Silicon etching in NF3/O-2 remote microwave plasmas, J VAC SCI A, 17(5), 1999, pp. 2431-2437
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
Authors: Standaert, TEFM Matsuo, PJ Allen, SD Oehrlein, GS Dalton, TJ
Citation: Tefm. Standaert et al., Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2, J VAC SCI A, 17(3), 1999, pp. 741-748
Surface science issues in plasma etching
Authors: Oehrlein, GS Doemling, MF Kastenmeier, BEE Matsuo, PJ Rueger, NR Schaepkens, M Standaert, TEFM
Citation: Gs. Oehrlein et al., Surface science issues in plasma etching, IBM J RES, 43(1-2), 1999, pp. 181-197
Risultati: 1-9 |