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Results: 1-4 |
Results: 4
Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures
Authors: Zhang, YW Zhang, TH Lu, DT Maximov, IA Sarwe, EL Graczyk, M Whitlow, HJ
Citation: Yw. Zhang et al., Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures, NUCL INST B, 175, 2001, pp. 737-743
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium
Authors: Zhang, YW Winzell, T Zhang, TH Maximov, IA Sarwe, EL Graczyk, M Montelius, L Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium, NUCL INST B, 159(3), 1999, pp. 133-141
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formationof thin silicide surface films
Authors: Zhang, YW Winzell, T Zhang, TH Andersson, M Maximov, IA Sarwe, EL Graczyk, M Montelius, L Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formationof thin silicide surface films, NUCL INST B, 159(3), 1999, pp. 142-157
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development
Authors: Zhang, YW Winzell, T Zhang, TH Maximov, IA Sarwe, EL Graczyk, M Montelius, L Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development, NUCL INST B, 159(3), 1999, pp. 158-165
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