ACNP - Italian Periodicals Catalogue

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Results: 1-14 |

Results: 14

Emitter interface in InP-based HBTs with InAlAs/InP composite emitters

Authors: McKinnon, WR Driad, R Storey, C Renaud, A McAlister, SP Garanzotis, T Springthorpe, AJ

Citation: Wr. Mckinnon et al., Emitter interface in InP-based HBTs with InAlAs/InP composite emitters, IEICE TR EL, E84C(10), 2001, pp. 1373-1378

Tunneling at the emitter periphery in silicon-germanium HBTs

Authors: McAlister, SP Storey, C Kovacic, SJ Lafontaine, H

Citation: Sp. Mcalister et al., Tunneling at the emitter periphery in silicon-germanium HBTs, IEICE TR EL, E84C(10), 2001, pp. 1431-1436

Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors

Authors: Driad, R McKinnon, WR McAlister, SP Garanzotis, T SpringThorpe, AJ

Citation: R. Driad et al., Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors, SEMIC SCI T, 16(3), 2001, pp. 171-175

Thermodynamics of GaNyAs1-y growth by metalorganic vapor phase epitaxy

Authors: Gupta, JA McKinnon, WR Noad, J Coulas, D Williams, RL Driad, R McAlister, SP

Citation: Ja. Gupta et al., Thermodynamics of GaNyAs1-y growth by metalorganic vapor phase epitaxy, J CRYST GR, 231(1-2), 2001, pp. 48-56

Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors

Authors: McAlister, SP McKinnon, WR Driad, R

Citation: Sp. Mcalister et al., Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors, IEEE DEVICE, 48(8), 2001, pp. 1745-1747

Oxygen plasma induced degradation in InGaAs/InP heterostructures

Authors: Driad, R McKinnon, WR McAlister, SP

Citation: R. Driad et al., Oxygen plasma induced degradation in InGaAs/InP heterostructures, J VAC SCI B, 18(6), 2000, pp. 2799-2802

Surface passivation of InGaAs for heterojunction bipolar transistor applications

Authors: Driad, R McKinnon, WR Lu, ZH McAlister, SP Poole, PJ Charbonneau, S

Citation: R. Driad et al., Surface passivation of InGaAs for heterojunction bipolar transistor applications, J VAC SCI A, 18(2), 2000, pp. 697-700

The temperature dependence of the dc characteristics of silicon germanium bipolar transistors

Authors: McAlister, SP Kovacic, S Renaud, A Zhou, ZF

Citation: Sp. Mcalister et al., The temperature dependence of the dc characteristics of silicon germanium bipolar transistors, J VAC SCI A, 18(2), 2000, pp. 770-774

Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors

Authors: Driad, R McKinnon, WR Lu, ZH McAlister, SP

Citation: R. Driad et al., Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors, J ELEC MAT, 29(12), 2000, pp. L33-L36

Reduction of surface recombination in InGaAs/InP heterostructures using UV-irradiation and ozone

Authors: Driad, R Lu, ZH Laframboise, S Scansen, D McKinnon, WR McAlister, SP

Citation: R. Driad et al., Reduction of surface recombination in InGaAs/InP heterostructures using UV-irradiation and ozone, JPN J A P 1, 38(2B), 1999, pp. 1124-1127

Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design

Authors: Driad, R McKinnon, WR Laframboise, S McAlister, SP

Citation: R. Driad et al., Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design, MICROW OPT, 21(4), 1999, pp. 235-238

Passivation of InP-based HBTs

Authors: Driad, R Laframboise, SR Lu, ZH McAlister, SP McKinnon, WR

Citation: R. Driad et al., Passivation of InP-based HBTs, SOL ST ELEC, 43(8), 1999, pp. 1445-1450

A model for gated-lateral BJT's based on standard MOSFET models

Authors: McKinnon, WR Ferguson, R McAlister, SP

Citation: Wr. Mckinnon et al., A model for gated-lateral BJT's based on standard MOSFET models, IEEE DEVICE, 46(2), 1999, pp. 427-429

Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

Authors: Driad, R Lu, ZH Charbonneau, S McKinnon, WR Laframboise, S Poole, PJ McAlister, SP

Citation: R. Driad et al., Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment, APPL PHYS L, 73(5), 1999, pp. 665-667

Risultati: 1-14 |