Authors: Nicholson, KT Zhang, KZ Holl, MMB McFeely, FR Calzaferri, G Pernisz, UC

Citation: Kt. Nicholson et al., Formation of mixed layers derived from functional silicon oxide clusters on gold, LANGMUIR, 17(25), 2001, pp. 7879-7885

Authors: Miller, KA John, C Zhang, KZ Nicholson, KT McFeely, FR Holl, MMB

Citation: Ka. Miller et al., Self-limiting chemical vapor deposition of an ultra-thin silicon oxide film using tri-(tert-butoxy)silanol, THIN SOL FI, 397(1-2), 2001, pp. 78-82

Authors: Shang, HL White, MH Guarini, KW Solomon, P Cartier, E McFeely, FR Yurkas, JJ Lee, WC

Citation: Hl. Shang et al., Interface studies of tungsten gate metal-oxide-silicon capacitors, APPL PHYS L, 78(20), 2001, pp. 3139-3141

Authors: Nicholson, KT Zhang, KZ Holl, MMB McFeely, FR Pernisz, UC

Citation: Kt. Nicholson et al., The dynamic nature of hydridosilsesquioxane clusters on gold surfaces, LANGMUIR, 16(22), 2000, pp. 8396-8403

Authors: Tiwari, S Solomon, PM Welser, JJ Jones, EC McFeely, FR Cartier, E

Citation: S. Tiwari et al., CMOS and Memories: From 100 nm to 10 nm!, MICROEL ENG, 46(1-4), 1999, pp. 3-6

Authors: Copel, M Varekamp, PR Kisker, DW McFeely, FR Litz, KE Holl, MMB

Citation: M. Copel et al., Nucleation of chemical vapor deposited silicon nitride on silicon dioxide, APPL PHYS L, 74(13), 1999, pp. 1830-1832