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Results: 1
Accurately modeling the drain to source current in recessed gate P-HEMT devices
Authors:
Fernandez, T Garcia, JA Tazon, A Mediavila, A Pedro, JC Garcia, JL
Citation:
T. Fernandez et al., Accurately modeling the drain to source current in recessed gate P-HEMT devices, IEEE ELEC D, 20(11), 1999, pp. 557-559
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