Authors: Goldhaber-Gordon, D Gores, J Shtrikman, H Mahalu, D Meirav, U Kastner, MA

Citation: D. Goldhaber-gordon et al., The Kondo effect in a single-electron transistor, MAT SCI E B, 84(1-2), 2001, pp. 17-21

Authors: Zacharia, IG Goldhaber-Gordon, D Granger, G Kastner, MA Khavin, YB Shtrikman, H Mahalu, D Meirav, U

Citation: Ig. Zacharia et al., Temperature dependence of Fano line shapes in a weakly coupled single-electron transistor - art. no. 155311, PHYS REV B, 6415(15), 2001, pp. 5311

Authors: Gores, J Goldhaber-Gordon, D Heemeyer, S Kastner, MA Shtrikman, H Mahalu, D Meirav, U

Citation: J. Gores et al., Fano resonances in electronic transport through a single-electron transistor, PHYS REV B, 62(3), 2000, pp. 2188-2194

Authors: Shtrikman, H Hanien, Y Soibel, A Meirav, U

Citation: H. Shtrikman et al., (N11)A GaAs: a preferable platform for high quality GaAs/AlGaAs structures, MICROELEC J, 30(4-5), 1999, pp. 323-328

Authors: Shtrikman, H Hanein, Y Soibel, A Meirav, U

Citation: H. Shtrikman et al., Superior molecular beam epitaxy (MBE) growth on (N 1 1)A GaAs, J CRYST GR, 202, 1999, pp. 221-225

Authors: Goldhaber-Gordon, D Gores, J Kastner, MA Shtrikman, H Mahalu, D Meirav, U

Citation: D. Goldhaber-gordon et al., From the Kondo regime to the mixed-valence regime in a single-electron transistor, PHYS REV L, 81(23), 1998, pp. 5225-5228