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Results:
1-11
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Results: 11
Authors:
Cherepenin, V
Karpov, A
Korjenevsky, A
Kornienko, V
Mazaletskaya, A
Mazourov, D
Meister, D
Citation: V. Cherepenin et al., A 3D electrical impedance tomography (EIT) system for breast cancer detection, PHYSL MEAS, 22(1), 2001, pp. 9-18
Authors:
Niehus, M
Schwarz, R
Koynov, S
Heuken, M
Meister, D
Meyer, BK
Citation: M. Niehus et al., Subbandgap absorption from photocurrent spectra in Al0.18GaN/GaN heterostructures, DIAM RELAT, 10(3-7), 2001, pp. 1331-1334
Authors:
Meyer, BK
Hofmann, DM
Leiter, FH
Meister, D
Topf, M
Alves, H
Romanov, N
Citation: Bk. Meyer et al., Defects in undoped and Mg-doped GaN and AlxGa1-xN, MAT SCI E B, 82(1-3), 2001, pp. 77-81
Authors:
Niehus, M
Schwarz, R
Koynov, S
Heuken, M
Meister, D
Meyer, BK
Main, C
Reynolds, S
Citation: M. Niehus et al., Density-of-states distribution in AlGaN obtained from transient photocurrent analysis, MAT SCI E B, 82(1-3), 2001, pp. 206-208
Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation
Authors:
Zhang, W
Roesel, S
Alves, HR
Meister, D
Kriegseis, W
Hofmann, DM
Meyer, BK
Riemann, T
Veit, P
Blaesing, J
Krost, A
Christen, J
Citation: W. Zhang et al., Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation, APPL PHYS L, 78(6), 2001, pp. 772-774
Authors:
Meister, D
Bohm, M
Topf, M
Kriegseis, W
Burkhardt, W
Dirnstorfer, I
Rosel, S
Farangis, B
Meyer, BK
Hoffmann, A
Siegle, H
Thomsen, C
Christen, J
Bertram, F
Citation: D. Meister et al., A comparison of the Hall-effect and secondary ion mass spectroscopy on theshallow oxygen donor in unintentionally doped GaN films, J APPL PHYS, 88(4), 2000, pp. 1811-1817
Authors:
Meister, D
Topf, M
Dirnstorfer, I
Meyer, BK
Schwarz, R
Heuken, M
Citation: D. Meister et al., Photoconductivity in AlxGa1-xN with different Al contents, PHYS ST S-B, 216(1), 1999, pp. 749-753
Authors:
Dirnstorfer, I
Hofmann, DM
Meister, D
Meyer, BK
Citation: I. Dirnstorfer et al., Postgrowth thermal treatment of CuIn(Ga)Se-2: Characterization of doping levels in In-rich thin films, J APPL PHYS, 85(3), 1999, pp. 1423-1428
Authors:
Witte, H
Krtschil, A
Lisker, M
Christen, J
Topf, M
Meister, D
Meyer, BK
Citation: H. Witte et al., Interface and bulk defects in SiC/GaN heterostructures characterized usingthermal admittance spectroscopy, APPL PHYS L, 74(10), 1999, pp. 1424-1426
Authors:
Meister, D
Citation: D. Meister, Measurement in aviation systems, HUM FAC TR, 1999, pp. 33-49
Authors:
Bedny, G
Meister, D
Citation: G. Bedny et D. Meister, Response to the review "Russian activity theory: Shedding light on a dark corner", CONT PSYCHO, 43(12), 1998, pp. 882-882
Risultati:
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