Authors: Aggarwal, RL Melngailis, I Verghese, S Molnar, RJ Geis, MW Mahoney, LJ

Citation: Rl. Aggarwal et al., Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n(+) diodes, SOL ST COMM, 117(9), 2001, pp. 549-553

Authors: Verghese, S McIntosh, KA Molnar, RJ Mahoney, LJ Aggarwal, RL Geis, MW Molvar, KM Duerr, EK Melngailis, I

Citation: S. Verghese et al., GaN avalanche photodiodes operating in linear-gain mode and Geiger mode, IEEE DEVICE, 48(3), 2001, pp. 502-511

Authors: McIntosh, KA Molnar, RJ Mahoney, LJ Lightfoot, A Geis, MW Molvar, KM Melngailis, I Aggarwal, RL Goodhue, WD Choi, SS Spears, DL Verghese, S

Citation: Ka. Mcintosh et al., GaN avalanche photodiodes grown by hydride vapor-phase epitaxy, APPL PHYS L, 75(22), 1999, pp. 3485-3487