Authors:
Boeve, H
Bruynseraede, C
Das, J
Dessein, K
Borghs, G
De Boeck, J
Sousa, RC
Melo, LV
Freitas, PP
Citation: H. Boeve et al., Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures., IEEE MAGNET, 35(5), 1999, pp. 2820-2825