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Citation: S. Simanowski et al., Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation, J CRYST GR, 227, 2001, pp. 595-599

Authors: Simanowski, S Herres, N Mermelstein, C Kiefer, R Schmitz, J Walther, M Wagner, J Weimann, G

Citation: S. Simanowski et al., Strain adjustment in (GaIn)(AsSb)/(A1Ga)(AsSb) QWs for 2.3-2.7 mu m laser structures, J CRYST GR, 209(1), 2000, pp. 15-20

Authors: Mermelstein, C Simanowski, S Mayer, M Kiefer, R Schmitz, J Walther, M Wagner, J

Citation: C. Mermelstein et al., Room-temperature low-threshold low-loss continuous-wave operation of 2.26 mu m GaInAsSb/AlGaAsSb quantum-well laser diodes, APPL PHYS L, 77(11), 2000, pp. 1581-1583

Authors: Simanowski, S Walther, M Schmitz, J Kiefer, R Herres, N Fuchs, F Maier, M Mermelstein, C Wagner, J Weimann, G

Citation: S. Simanowski et al., Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb)layers for 2.0-2.5 mu m laser structures on GaSb substrates, J CRYST GR, 202, 1999, pp. 849-853