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Results:
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Results: 21
Morphology change of artificial crystal originated particles, and the effect on gate oxide integrity
Authors:
Bearda, T
Mertens, PW
Heyns, MM
Schmolke, R
Citation: T. Bearda et al., Morphology change of artificial crystal originated particles, and the effect on gate oxide integrity, JPN J A P 2, 39(8B), 2000, pp. L841-L843
Authors:
Bearda, T
Mertens, PW
Heyns, MM
Wallinga, H
Woerlee, P
Citation: T. Bearda et al., Breakdown and recovery of thin gate oxides, JPN J A P 2, 39(6B), 2000, pp. L582-L584
Authors:
Mertens, PW
Marent, K
Citation: Pw. Mertens et K. Marent, Single-wafer wet cleaning improved by novel high-performance wafer drying, SOL ST TECH, 43(9), 2000, pp. 113
Authors:
Houssa, M
Mertens, PW
Heyns, MM
Jeon, JS
Halliyal, A
Ogle, B
Citation: M. Houssa et al., Soft breakdown in very thin Ta2O5 gate dielectric layers, SOL ST ELEC, 44(3), 2000, pp. 521-525
Authors:
De Witte, H
De Gendt, S
Douglas, M
Conard, T
Kenis, K
Mertens, PW
Vandervorst, W
Gijbels, R
Citation: H. De Witte et al., Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on Si wafer surfaces, J ELCHEM SO, 147(5), 2000, pp. 1915-1919
Authors:
Knotter, DM
de Gendt, S
Mertens, PW
Heyns, MM
Citation: Dm. Knotter et al., Silicon surface roughening mechanisms in ammonia hydrogen peroxide mixtures, J ELCHEM SO, 147(2), 2000, pp. 736-740
Authors:
Bearda, T
Mertens, PW
Heyns, MM
Schmolke, R
Citation: T. Bearda et al., Fabrication and characterization of artificial crystal originated particles, JPN J A P 2, 38(12B), 1999, pp. L1509-L1511
Authors:
Houssa, M
De Gendt, S
de Bokx, P
Mertens, PW
Heyns, MM
Citation: M. Houssa et al., Effect of x-ray irradiation on the electrical characteristics of ultra-thin gate oxides, SEMIC SCI T, 14(9), 1999, pp. 741-746
Authors:
Houssa, M
Mertens, PW
Heyns, MM
Citation: M. Houssa et al., Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides, SEMIC SCI T, 14(10), 1999, pp. 892-896
Authors:
Houssa, M
De Gendt, S
de Bokx, P
Mertens, PW
Heyns, MM
Citation: M. Houssa et al., X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides, MICROEL ENG, 48(1-4), 1999, pp. 43-46
Authors:
Mertens, PW
Bearda, T
Houssa, M
Loewenstein, LM
Cornelissen, I
De Gendt, S
Kenis, K
Teerlinck, I
Vos, R
Meuris, M
Heyns, MM
Citation: Pw. Mertens et al., Advanced cleaning for the growth of ultrathin gate oxide, MICROEL ENG, 48(1-4), 1999, pp. 199-206
Authors:
Martin, AR
Baeyens, M
Hub, W
Mertens, PW
Kolbesen, BO
Citation: Ar. Martin et al., Alkaline cleaning of silicon wafers: additives for the prevention of metalcontamination, MICROEL ENG, 45(2-3), 1999, pp. 197-208
Authors:
Heyns, M
Mertens, PW
Ruzyllo, J
Lee, MYM
Citation: M. Heyns et al., Advanced wet and dry cleaning coming together for next generation, SOL ST TECH, 42(3), 1999, pp. 37
Authors:
Houssa, M
Nigam, T
Mertens, PW
Heyns, MM
Citation: M. Houssa et al., Effect of extreme surface roughness on the electrical characteristics of ultra-thin gate oxides, SOL ST ELEC, 43(1), 1999, pp. 159-167
Authors:
Houssa, M
Degraeve, R
Mertens, PW
Heyns, MM
Jeon, JS
Halliyal, A
Ogle, B
Citation: M. Houssa et al., Electrical properties of thin SiON/Ta2O5 gate dielectric stacks, J APPL PHYS, 86(11), 1999, pp. 6462-6467
Authors:
Heyns, MM
Bearda, T
Cornelissen, I
De Gendt, S
Degraeve, R
Groeseneken, G
Kenens, C
Knotter, DM
Loewenstein, LM
Mertens, PW
Mertens, S
Meuris, M
Nigam, T
Schaekers, M
Teerlinck, I
Vandervorst, W
Vos, R
Wolke, K
Citation: Mm. Heyns et al., Cost-effective cleaning and high-quality thin gate oxides, IBM J RES, 43(3), 1999, pp. 339-350
Authors:
Knotter, DM
de Gendt, S
Baeyens, M
Mertens, PW
Heyns, HM
Citation: Dm. Knotter et al., Hydrogen peroxide decomposition in ammonia solutions, J ELCHEM SO, 146(9), 1999, pp. 3476-3481
Authors:
Loewenstein, LM
Charpin, F
Mertens, PW
Citation: Lm. Loewenstein et al., Competitive adsorption of metal ions onto hydrophilic silicon surfaces from aqueous solution, J ELCHEM SO, 146(2), 1999, pp. 719-727
Authors:
Loewenstein, LM
Mertens, PW
Citation: Lm. Loewenstein et Pw. Mertens, Competitive adsorption of cations onto the silicon surface - The role of the ammonium ion in ammonia-peroxide solution, J ELCHEM SO, 146(10), 1999, pp. 3886-3889
Authors:
Bearda, T
Houssa, M
Mertens, PW
Vanhellemont, J
Heyns, M
Citation: T. Bearda et al., Observation of critical gate oxide thickness for substrate-defect related oxide failure, APPL PHYS L, 75(9), 1999, pp. 1255-1257
Authors:
Vandewalle, N
Ausloos, M
Houssa, M
Mertens, PW
Heyns, MM
Citation: N. Vandewalle et al., Non-Gaussian behavior and anticorrelations in ultrathin gate oxides after soft breakdown, APPL PHYS L, 74(11), 1999, pp. 1579-1581
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