Authors: Donaton, RA Coenegrachts, B Maenhoudt, M Pollentier, I Struyf, H Vanhaelemeersch, S Vos, I Meuris, M Fyen, W Beyer, G Tokei, Z Stucchi, M Vervoort, I De Roest, D Maex, K

Citation: Ra. Donaton et al., Integration of Cu and low-k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures, MICROEL ENG, 55(1-4), 2001, pp. 277-283

Authors: Zhong, L Yang, J Holland, K Grillaert, J Devriend, K Heylen, N Meuris, M

Citation: L. Zhong et al., A static model for scratches generated during aluminum chemical-mechanicalpolishing process: Orbital technology, JPN J A P 1, 38(4A), 1999, pp. 1932-1938

Authors: Mertens, PW Bearda, T Houssa, M Loewenstein, LM Cornelissen, I De Gendt, S Kenis, K Teerlinck, I Vos, R Meuris, M Heyns, MM

Citation: Pw. Mertens et al., Advanced cleaning for the growth of ultrathin gate oxide, MICROEL ENG, 48(1-4), 1999, pp. 199-206

Authors: Triwikantoro,"Toma, D Meuris, M Koster, U

Citation: D. Triwikantoro,"toma et al., Oxidation of Zr-based metallic glasses in air, J NON-CRYST, 252, 1999, pp. 719-723

Authors: Heyns, MM Bearda, T Cornelissen, I De Gendt, S Degraeve, R Groeseneken, G Kenens, C Knotter, DM Loewenstein, LM Mertens, PW Mertens, S Meuris, M Nigam, T Schaekers, M Teerlinck, I Vandervorst, W Vos, R Wolke, K

Citation: Mm. Heyns et al., Cost-effective cleaning and high-quality thin gate oxides, IBM J RES, 43(3), 1999, pp. 339-350

Authors: De Smedt, F Stevens, G De Gendt, S Cornelissen, I Arnauts, S Meuris, M Heyns, MM Vinckier, C

Citation: F. De Smedt et al., A wet chemical method for the determination of thickness of SiO2 layers below the nanometer level, J ELCHEM SO, 146(5), 1999, pp. 1873-1878