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Results:
1-8
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Results: 8
Authors:
Mikhelashvili, V
Eisenstein, G
Uzdin, R
Citation: V. Mikhelashvili et al., Extraction of Schottky diode parameters with a bias dependent barrier height, SOL ST ELEC, 45(1), 2001, pp. 143-148
Authors:
Mikhelashvili, V
Eisenstein, G
Citation: V. Mikhelashvili et G. Eisenstein, Optical and electrical characterization of the electron beam gun evaporated TiO2 film, MICROEL REL, 41(7), 2001, pp. 1057-1061
Authors:
Mikhelashvili, V
Eisenstein, G
Edelmann, F
Citation: V. Mikhelashvili et al., Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon, J APPL PHYS, 90(10), 2001, pp. 5447-5449
Authors:
Mikhelashvili, V
Eisenstein, G
Citation: V. Mikhelashvili et G. Eisenstein, Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation, J APPL PHYS, 89(6), 2001, pp. 3256-3269
Authors:
Edelman, F
Hahn, H
Seifried, S
Alof, C
Hoche, H
Balogh, A
Werner, P
Zakrzewska, K
Radecka, M
Pasierb, P
Chack, A
Mikhelashvili, V
Eisenstein, G
Citation: F. Edelman et al., Structural evolution of SnO2-TiO2 nanocrystalline films for gas sensors, MAT SCI E B, 69, 2000, pp. 386-391
Authors:
Mikhelashvili, V
Eisenstein, G
Citation: V. Mikhelashvili et G. Eisenstein, Characteristics of MIS capacitors based on multilayer TiO2-Ta2O5 structures, MICROEL REL, 40(4-5), 2000, pp. 657-658
Authors:
Mikhelashvili, V
Eisenstein, G
Citation: V. Mikhelashvili et G. Eisenstein, The influence of image forces on the extraction of physical parameters in Schottky barrier diodes, J APPL PHYS, 86(12), 1999, pp. 6965-6969
Authors:
Mikhelashvili, V
Eisenstein, G
Garber, V
Fainleib, S
Bahir, G
Ritter, D
Orenstein, M
Peer, A
Citation: V. Mikhelashvili et al., On the extraction of linear and nonlinear physical parameters in nonideal diodes, J APPL PHYS, 85(9), 1999, pp. 6873-6883
Risultati:
1-8
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