Authors:
Lenahan, PM
Mishima, TD
Fogarty, TN
Wilkins, R
Citation: Pm. Lenahan et al., Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface, APPL PHYS L, 79(20), 2001, pp. 3266-3268
Citation: Td. Mishima et al., Response to "Comment on 'Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 hyperfine spectrum' ", APPL PHYS L, 78(10), 2001, pp. 1453-1454
Citation: Td. Mishima et Pm. Lenahan, A spin-dependent recombination study of radiation-induced P b1 centers at the (001) Si/SiO2 interface, IEEE NUCL S, 47(6), 2000, pp. 2249-2255
Citation: Td. Mishima et al., Do P-b1 centers have levels in the Si band gap? Spin-dependent recombination study of the P-b1 "hyperfine spectrum", APPL PHYS L, 76(25), 2000, pp. 3771-3773