Citation: S. Makioka et al., Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems, IEEE DEVICE, 48(8), 2001, pp. 1510-1514
Authors:
Ishida, H
Koizumi, H
Miyatsuji, K
Takenaka, H
Tanaka, T
Ueda, D
Citation: H. Ishida et al., A low-power GaAs front-end IC with current-reuse configuration using 0.15-mu m-gate MODFET's, IEEE MICR T, 48(8), 2000, pp. 1303-1307
Authors:
Ishida, H
Miyatsuji, K
Tanaka, T
Takenaka, H
Furukawa, H
Nishitsuji, M
Tamura, A
Ueda, D
Citation: H. Ishida et al., A low-current and low-distortion wide-band amplifier using 0.2-mu m gate MODFET fabricated by using phase-shift lithography, IEEE MICR T, 48(5), 2000, pp. 771-776
Authors:
Ishida, H
Miyatsuji, K
Tanaka, T
Ueda, D
Hamaguchi, C
Citation: H. Ishida et al., A compact plastic package with high RF isolation by subsidiary inner ground leads, IEICE TR EL, E82C(11), 1999, pp. 2044-2049