AAAAAA

   
Results: 1-9 |
Results: 9
Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE
Authors: Webb, JB Tang, H Bardwell, JA Moisa, S Peters, C MacElwee, T
Citation: Jb. Webb et al., Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE, J CRYST GR, 230(3-4), 2001, pp. 584-589
Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution
Authors: Bardwell, JA Webb, JB Tang, H Fraser, J Moisa, S
Citation: Ja. Bardwell et al., Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution, J APPL PHYS, 89(7), 2001, pp. 4142-4149
Role of oxygen bubble generation in anodic film growth on InP
Authors: Pakes, A Echeverria, F Skeldon, P Thompson, GE Fraser, JW McCaffrey, JP Moisa, S Graham, MJ Habazaki, H Shimizu, K
Citation: A. Pakes et al., Role of oxygen bubble generation in anodic film growth on InP, CORROS SCI, 43(11), 2001, pp. 2173-2184
Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
Authors: Tang, H Bardwell, JA Webb, JB Moisa, S Fraser, J Rolfe, S
Citation: H. Tang et al., Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy, APPL PHYS L, 79(17), 2001, pp. 2764-2766
Si/Si1-xGex photodetectors using three-dimensional growth modes to enhancephotoresponse at lambda=1550 nm
Authors: Janz, S Baribeau, JM Lockwood, DJ McCaffrey, JP Moisa, S Rowell, NL Xu, DX Lafontaine, H Pearson, MRT
Citation: S. Janz et al., Si/Si1-xGex photodetectors using three-dimensional growth modes to enhancephotoresponse at lambda=1550 nm, J VAC SCI A, 18(2), 2000, pp. 588-592
In situ repair of optoelectronic devices with femtosecond laser pulses
Authors: Dupont, E Zhu, X Chiu, S Moisa, S Buchanan, M Gao, M Liu, HC Corkum, PB
Citation: E. Dupont et al., In situ repair of optoelectronic devices with femtosecond laser pulses, SEMIC SCI T, 15(3), 2000, pp. L15-L18
Enhanced quantum-well photoluminescence in InGaAs/InGaAsP heterostructuresfollowing excimer-laser-assisted surface processing
Authors: Dubowski, JJ Poole, PJ Sproule, GI Marshall, G Moisa, S Lacelle, C Buchanan, M
Citation: Jj. Dubowski et al., Enhanced quantum-well photoluminescence in InGaAs/InGaAsP heterostructuresfollowing excimer-laser-assisted surface processing, APPL PHYS A, 69, 1999, pp. S299-S303
A simple wet etch for GaN
Authors: Bardwell, JA Foulds, IG Webb, JB Tang, H Fraser, J Moisa, S Rolfe, SJ
Citation: Ja. Bardwell et al., A simple wet etch for GaN, J ELEC MAT, 28(10), 1999, pp. L24-L26
An infrared reflection technique for characterization of GaN epitaxial films
Authors: Bardwell, JA Dharma-wardana, MWC Leathem, B Moisa, S Webb, JB Tam, B
Citation: Ja. Bardwell et al., An infrared reflection technique for characterization of GaN epitaxial films, J ELCHEM SO, 146(8), 1999, pp. 3124-3127
Risultati: 1-9 |