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Results: 1-10 |
Results: 10
Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides
Authors: Goguenheim, D Bravaix, A Ananou, B Trapes, C Mondon, F Reimbold, G
Citation: D. Goguenheim et al., Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides, J NON-CRYST, 280(1-3), 2001, pp. 78-85
Corticosteroid-binding globulin status at the fetomaternal interface during human term pregnancy
Authors: Benassayag, C Souski, I Mignot, TM Robert, B Hassid, J Duc-Goiran, P Mondon, F Rebourcet, R Dehennin, L Nunez, EA Ferre, F
Citation: C. Benassayag et al., Corticosteroid-binding globulin status at the fetomaternal interface during human term pregnancy, BIOL REPROD, 64(3), 2001, pp. 812-821
Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors
Authors: Meinertzhagen, A Petit, C Jourdain, M Mondon, F
Citation: A. Meinertzhagen et al., Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors, SOL ST ELEC, 44(4), 2000, pp. 623-630
Electrical characterization of low permittivity materials for ULSI inter-metal-insulation
Authors: Cluzel, J Mondon, F Loquet, Y Morand, Y Reimbold, G
Citation: J. Cluzel et al., Electrical characterization of low permittivity materials for ULSI inter-metal-insulation, MICROEL REL, 40(4-5), 2000, pp. 675-678
Evidence for progesterone receptors in the human fetoplacental vascular tree
Authors: Cudeville, C Mondon, F Robert, B Rebourcet, R Mignot, TM Benassayag, C Ferre, F
Citation: C. Cudeville et al., Evidence for progesterone receptors in the human fetoplacental vascular tree, BIOL REPROD, 62(3), 2000, pp. 759-765
Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
Authors: Goguenheim, D Bravaix, A Vuillaume, D Mondon, F Candelier, P Jourdain, M Meinertzhagen, A
Citation: D. Goguenheim et al., Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides, MICROEL REL, 39(2), 1999, pp. 165-169
On positive charge annihilation and stress-induced leakage current decrease
Authors: Meinertzhagen, A Petit, C Jourdain, M Mondon, F Gogenheim, D
Citation: A. Meinertzhagen et al., On positive charge annihilation and stress-induced leakage current decrease, MICROEL REL, 39(2), 1999, pp. 191-196
Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections
Authors: Goguenheim, A Bravaix, A Vuillaume, D Mondon, F Jourdain, M Meinertzhagen, A
Citation: A. Goguenheim et al., Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections, J NON-CRYST, 245, 1999, pp. 41-47
Doping measurements in thin silicon-on-insulator films
Authors: Henaux, S Mondon, F Gusella, F Kling, I Reimbold, G
Citation: S. Henaux et al., Doping measurements in thin silicon-on-insulator films, J ELCHEM SO, 146(7), 1999, pp. 2737-2743
Stress-induced leakage current reduction by a low field of opposite polarity to the stress field
Authors: Meinertzhagen, A Petit, C Jourdain, M Mondon, F
Citation: A. Meinertzhagen et al., Stress-induced leakage current reduction by a low field of opposite polarity to the stress field, J APPL PHYS, 84(9), 1998, pp. 5070-5079
Risultati: 1-10 |