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Results: 1-25 | 26-50 | 51-75 | 76-90 |
Results: 76-90/90
Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers
Authors: Paskova, T Birch, J Tungasmita, S Beccard, R Heuken, M Svedberg, EB Runesson, P Goldys, EM Monemar, B
Citation: T. Paskova et al., Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers, PHYS ST S-A, 176(1), 1999, pp. 415-419
Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films
Authors: Paskova, T Goldys, EM Monemar, B
Citation: T. Paskova et al., Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films, J CRYST GR, 203(1-2), 1999, pp. 1-11
Optical properties of nanostructures self-organized in CdSe ZnSe fractional monolayer superlattices
Authors: Toropov, AA Shubina, TV Sorokin, SV Sedova, IV Sitnikova, AA Ivanov, SV Karlsteen, M Willander, M Bergman, JP Pozina, GR Monemar, B
Citation: Aa. Toropov et al., Optical properties of nanostructures self-organized in CdSe ZnSe fractional monolayer superlattices, J CRYST GR, 202, 1999, pp. 1231-1234
Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
Authors: Son, NT Ellison, A Magnusson, B MacMillan, MF Chen, WM Monemar, B Janzen, E
Citation: Nt. Son et al., Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC, J APPL PHYS, 86(8), 1999, pp. 4348-4353
Contribution of free-electron recombination to the luminescence spectra ofthick GaN films grown by hydride vapor phase epitaxy
Authors: Arnaudov, B Paskova, T Goldys, EM Yakimova, R Evtimova, S Ivanov, IG Henry, A Monemar, B
Citation: B. Arnaudov et al., Contribution of free-electron recombination to the luminescence spectra ofthick GaN films grown by hydride vapor phase epitaxy, J APPL PHYS, 85(11), 1999, pp. 7888-7892
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
Authors: Buyanova, IA Chen, WM Pozina, G Bergman, JP Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy, APPL PHYS L, 75(4), 1999, pp. 501-503
Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
Authors: Pozina, G Bergman, JP Paskova, T Monemar, B
Citation: G. Pozina et al., Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy, APPL PHYS L, 75(26), 1999, pp. 4124-4126
Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
Authors: Buyanova, IA Chen, WM Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures, APPL PHYS L, 75(24), 1999, pp. 3781-3783
Optical properties of doped InGaN GaN multiquantum-well structures
Authors: Dalfors, J Bergman, JP Holtz, PO Sernelius, BE Monemar, B Amano, H Akasaki, I
Citation: J. Dalfors et al., Optical properties of doped InGaN GaN multiquantum-well structures, APPL PHYS L, 74(22), 1999, pp. 3299-3301
Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells
Authors: Wongmanerod, S Holtz, PO Sernelius, B Reginski, K Bugajski, M Godlewski, M Mauritz, O Zhao, QX Bergman, JP Monemar, B
Citation: S. Wongmanerod et al., Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells, PHYS ST S-B, 210(2), 1998, pp. 615-620
Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of the O-p donor in GaP
Authors: Chen, WM Buyanova, IA Wagner, M Monemar, B Lindstrom, JL Amano, H Akasaki, I
Citation: Wm. Chen et al., Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of the O-p donor in GaP, PHYS REV B, 58(20), 1998, pp. R13351-R13354
Optical properties of GaN
Authors: Monemar, B
Citation: B. Monemar, Optical properties of GaN, SEM SEMIMET, 50, 1998, pp. 305-368
Optical studies of carrier transport phenomena in CdSe/ZnSe fractional monolayer superlattices
Authors: Shubina, TV Toropov, AA Sorokin, SV Ivanov, SV Kop'ev, PS Pozina, GR Bergman, JP Monemar, B
Citation: Tv. Shubina et al., Optical studies of carrier transport phenomena in CdSe/ZnSe fractional monolayer superlattices, THIN SOL FI, 336(1-2), 1998, pp. 377-380
Si delta-layers embedded in GaAs
Authors: Holtz, PO Sernelius, B Buyanov, AV Pozina, G Radamson, HH Madsen, LD McCaffrey, JP Monemar, B Thordson, J Andersson, TG
Citation: Po. Holtz et al., Si delta-layers embedded in GaAs, APPL PHYS L, 73(25), 1998, pp. 3709-3711
Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
Authors: Goldys, EM Paskova, T Ivanov, IG Arnaudov, B Monemar, B
Citation: Em. Goldys et al., Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence, APPL PHYS L, 73(24), 1998, pp. 3583-3585
Risultati: 1-25 | 26-50 | 51-75 | 76-90 |