Authors: Oh, SH Monroe, D Hergenrother, JM

Citation: Sh. Oh et al., Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs, IEEE ELEC D, 21(9), 2000, pp. 445-447

Authors: Weir, BE Alam, MA Bude, JD Silverman, PJ Ghetti, A Baumann, F Diodato, P Monroe, D Sorsch, T Timp, GL Ma, Y Brown, MM Hamad, A Hwang, D Mason, P

Citation: Be. Weir et al., Gate oxide reliability projection to the sub-2 nm regime, SEMIC SCI T, 15(5), 2000, pp. 455-461

Authors: Ghetti, A Alam, M Bude, J Monroe, D Sangiorgi, E Vaidya, H

Citation: A. Ghetti et al., Stress induced leakage current analysis via quantum yield experiments, IEEE DEVICE, 47(7), 2000, pp. 1341-1348

Authors: Lea-Currie, YR Monroe, D Mcintosh, MK

Citation: Yr. Lea-currie et al., Dehydroepiandrosterone and related steroids alter 3T3-L1 preadipocyte proliferation and differentiation, COMP BIOC C, 123(1), 1999, pp. 17-25

Authors: Vuong, HH Gossmann, HJ Pelaz, L Celler, GK Jacobson, DC Barr, D Hergenrother, J Monroe, D Venezia, VC Rafferty, CS Hillenius, SJ McKinley, J Stevie, FA Granger, C

Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085