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Results:
1-14
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Results: 14
Authors:
Moran, PD
Kuech, TF
Citation: Pd. Moran et Tf. Kuech, Kinetics of strain relaxation in semiconductor films grown on borosilicateglass-bonded substrates, J ELEC MAT, 30(7), 2001, pp. 802-806
Authors:
Hansen, DM
Albaugh, CE
Moran, PD
Kuech, TF
Citation: Dm. Hansen et al., Chemical investigations of GaAs wafer bonded interfaces, J APPL PHYS, 90(12), 2001, pp. 5991-5999
Authors:
Hansen, DM
Albaugh, CE
Moran, PD
Kuech, TF
Citation: Dm. Hansen et al., Chemical role of oxygen plasma in wafer bonding using borosilicate glasses, APPL PHYS L, 79(21), 2001, pp. 3413-3415
Authors:
Moran, PD
Chow, D
Hunter, A
Kuech, TF
Citation: Pd. Moran et al., Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding, APPL PHYS L, 78(15), 2001, pp. 2232-2234
Authors:
Yi, SS
Moran, PD
Zhang, X
Cerrina, F
Carter, J
Smith, HI
Kuech, TF
Citation: Ss. Yi et al., Oriented crystallization of GaSb on a patterned, amorphous Si substrate, APPL PHYS L, 78(10), 2001, pp. 1358-1360
Authors:
Finnie, KS
Luca, V
Moran, PD
Bartlett, JR
Woolfrey, JL
Citation: Ks. Finnie et al., Vibrational spectroscopy and EXAFS study of Ti(OC2H5)(4) and alcohol exchange in Ti(iso-OC3H7)(4), J MAT CHEM, 10(2), 2000, pp. 409-418
Authors:
Zheng, Y
Moran, PD
Guan, ZF
Lau, SS
Hansen, DM
Kuech, TF
Haynes, TE
Hoechbauer, T
Nastasi, M
Citation: Y. Zheng et al., Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding, J ELEC MAT, 29(7), 2000, pp. 916-920
Authors:
Hansen, DM
Charters, D
Au, YL
Mak, WK
Tejasukmana, W
Moran, PD
Kuech, TF
Citation: Dm. Hansen et al., Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate, J ELEC MAT, 29(11), 2000, pp. 1312-1318
Authors:
Matyi, RJ
Moran, PD
Hagquist, WWD
Volz, HM
Citation: Rj. Matyi et al., Alignment system for crossed parabolic x-ray mirrors, REV SCI INS, 71(6), 2000, pp. 2292-2295
Authors:
Moran, PD
Hansen, DM
Matyi, RJ
Mawst, LJ
Kuech, TF
Citation: Pd. Moran et al., Experimental test for elastic compliance during growth on glass-bonded compliant substrates, APPL PHYS L, 76(18), 2000, pp. 2541-2543
Authors:
Moran, PD
Bartlett, JR
Bowmaker, GA
Woolfrey, JL
Cooney, RP
Citation: Pd. Moran et al., Formation of TiO2 sols, gels and nanopowders from hydrolysis of Ti((OPr)-Pr-i)(4) in AOT reverse micelles, J SOL-GEL S, 15(3), 1999, pp. 251-262
Authors:
Moran, PD
Hansen, DM
Matyi, RJ
Redwing, JM
Kuech, TF
Citation: Pd. Moran et al., Realization and characterization of ultrathin GaAs-on-insulator structures, J ELCHEM SO, 146(9), 1999, pp. 3506-3509
Authors:
Moran, PD
Hansen, DM
Matyi, RJ
Cederberg, JG
Mawst, LJ
Kuech, TF
Citation: Pd. Moran et al., InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality, APPL PHYS L, 75(11), 1999, pp. 1559-1561
Authors:
Hansen, DM
Moran, PD
Dunn, KA
Babcock, SE
Matyi, RJ
Kuech, TF
Citation: Dm. Hansen et al., Development of a glass-bonded compliant substrate, J CRYST GR, 195(1-4), 1998, pp. 144-150
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