Authors:
Masson, P
Morfouli, P
Autran, JL
Wortman, JJ
Citation: P. Masson et al., Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by low-pressure Rapid Thermal Chemical Vapor Deposition, MICROEL ENG, 48(1-4), 1999, pp. 211-214
Authors:
Masson, P
Morfouli, P
Autran, JL
Brini, J
Balland, B
Vogel, EM
Wortman, JJ
Citation: P. Masson et al., Electrical properties of oxynitride thin films using noise and charge pumping measurements, J NON-CRYST, 245, 1999, pp. 54-58