Authors: Masson, P Morfouli, P Autran, JL Wortman, JJ

Citation: P. Masson et al., Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by low-pressure Rapid Thermal Chemical Vapor Deposition, MICROEL ENG, 48(1-4), 1999, pp. 211-214

Authors: Masson, P Morfouli, P Autran, JL Brini, J Balland, B Vogel, EM Wortman, JJ

Citation: P. Masson et al., Electrical properties of oxynitride thin films using noise and charge pumping measurements, J NON-CRYST, 245, 1999, pp. 54-58