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Citation: Gr. Moriarty et al., Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers, MAT SCI E B, 80(1-3), 2001, pp. 284-288

Authors: Moriarty, GR Kildemo, M Beechinor, JT Murtagh, M Kelly, PV Crean, GM Bland, SW

Citation: Gr. Moriarty et al., Optical and structural properties of InGaP heterostructures, THIN SOL FI, 364(1-2), 2000, pp. 244-248