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Results: 1-3 |
Results: 3
Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method
Authors: Poncet, A Faugeras, C Mouis, M
Citation: A. Poncet et al., Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method, EPJ-APPL PH, 15(2), 2001, pp. 117-121
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture
Authors: Militaru, L Souifi, A Mouis, M Chantre, A Bremond, G
Citation: L. Militaru et al., Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture, MICROEL REL, 41(2), 2001, pp. 253-263
RTS noise in submicron SiGe epitaxial base bipolar transistors
Authors: Militaru, L Souifi, A Mouis, M Bremond, G
Citation: L. Militaru et al., RTS noise in submicron SiGe epitaxial base bipolar transistors, MICROEL REL, 40(8-10), 2000, pp. 1585-1590
Risultati: 1-3 |