AAAAAA

   
Results: 1-17 |
Results: 17
Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy
Authors: Daudin, B Feuillet, G Mariette, H Mula, G Pelekanos, N Molva, E Rouviere, JL Adelmann, C Martinez-Guerrero, E Barjon, J Chabuel, F Bataillou, B Simon, J
Citation: B. Daudin et al., Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(3B), 2001, pp. 1892-1895
Growth and characterisation of self-assembled cubic GaN quantum dots
Authors: Adelmann, C Guerrero, EM Chabuel, F Simon, J Bataillou, B Mula, G Dang, LS Pelekanos, NT Daudin, B Feuillet, G Mariette, H
Citation: C. Adelmann et al., Growth and characterisation of self-assembled cubic GaN quantum dots, MAT SCI E B, 82(1-3), 2001, pp. 212-214
Time-resolved photoluminescence studies of cubic and hexagonal GaN quantumdots
Authors: Simon, J Martinez-Guerrero, E Adelmann, C Mula, G Daudin, B Feuillet, G Mariette, H Pelekanos, NT
Citation: J. Simon et al., Time-resolved photoluminescence studies of cubic and hexagonal GaN quantumdots, PHYS ST S-B, 224(1), 2001, pp. 13-16
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) - art. no. 195406
Authors: Mula, G Adelmann, C Moehl, S Oullier, J Daudin, B
Citation: G. Mula et al., Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) - art. no. 195406, PHYS REV B, 6419(19), 2001, pp. 5406
Strain relaxation in (0001) AlN/GaN heterostructures - art. no. 245307
Authors: Bourret, A Adelmann, C Daudin, B Rouviere, JL Feuillet, G Mula, G
Citation: A. Bourret et al., Strain relaxation in (0001) AlN/GaN heterostructures - art. no. 245307, PHYS REV B, 6324(24), 2001, pp. 5307
Structure and ordering of GaN quantum dot multilayers
Authors: Chamard, V Metzger, TH Bellet-Amalric, E Daudin, B Adelmann, C Mariette, H Mula, G
Citation: V. Chamard et al., Structure and ordering of GaN quantum dot multilayers, APPL PHYS L, 79(13), 2001, pp. 1971-1973
Mg-modified surface kinetics of the GaN growth by molecular beam epitaxy
Authors: Daudin, B Mula, G Peyla, P
Citation: B. Daudin et al., Mg-modified surface kinetics of the GaN growth by molecular beam epitaxy, PHYS REV B, 61(15), 2000, pp. 10330-10335
MBE growth of GaN films in presence of surfactants: The effect of Mg and Si
Authors: Mula, G Daudin, B Adelmann, C Peyla, P
Citation: G. Mula et al., MBE growth of GaN films in presence of surfactants: The effect of Mg and Si, MRS I J N S, 5, 2000, pp. NIL_179-NIL_184
Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode
Authors: Daudin, B Feuillet, G Mula, G Mariette, H Rouviere, JL Pelekanos, N Fishman, G Adelmann, C Simon, J
Citation: B. Daudin et al., Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode, DIAM RELAT, 9(3-6), 2000, pp. 506-511
Tunable piezoelectric semiconductor laser controlled by the carrier injection level
Authors: Ortiz, V Pelekanos, NT Mula, G Dang, LS
Citation: V. Ortiz et al., Tunable piezoelectric semiconductor laser controlled by the carrier injection level, APPL PHYS L, 77(6), 2000, pp. 788-790
Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy
Authors: Martinez-Guerrero, E Adelmann, C Chabuel, F Simon, J Pelekanos, NT Mula, G Daudin, B Feuillet, G Mariette, H
Citation: E. Martinez-guerrero et al., Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy, APPL PHYS L, 77(6), 2000, pp. 809-811
Mg-induced kinetical changes in the growth of cubic and hexagonal GaN by molecular beam epitaxy
Authors: Mula, G Daudin, B Peyla, P
Citation: G. Mula et al., Mg-induced kinetical changes in the growth of cubic and hexagonal GaN by molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 385-389
Epitaxial growth of GaN, AlN and InN: 2D/3D transition and surfactant effects
Authors: Daudin, B Feuillet, G Mula, G Mariette, H Rouviere, JL Pelekanos, N Fishman, G Adelmann, C Simon, J
Citation: B. Daudin et al., Epitaxial growth of GaN, AlN and InN: 2D/3D transition and surfactant effects, PHYS ST S-A, 176(1), 1999, pp. 621-627
Multiperiod piezoelectric-barrier all-optical light modulator
Authors: Ortiz, V Mula, G Pelekanos, NT
Citation: V. Ortiz et al., Multiperiod piezoelectric-barrier all-optical light modulator, MICROELEC J, 30(4-5), 1999, pp. 409-412
Influence of a compressive strain on the stoichiometry of the (001)CdTe surface during molecular beam epitaxy
Authors: Carbonell, L Mula, G Tatarenko, S
Citation: L. Carbonell et al., Influence of a compressive strain on the stoichiometry of the (001)CdTe surface during molecular beam epitaxy, J CRYST GR, 203(1-2), 1999, pp. 61-66
II-VI infrared microcavity emitters with 2 postgrowth dielectric mirrors
Authors: Roux, C Filloux, P Mula, G Pautrat, JL
Citation: C. Roux et al., II-VI infrared microcavity emitters with 2 postgrowth dielectric mirrors, J CRYST GR, 202, 1999, pp. 1036-1039
Laser emission in HgCdTe in the 2-3.5 mu m range
Authors: Bleuse, J Bonnet-Gamard, J Mula, G Magnea, N Pautrat, JL
Citation: J. Bleuse et al., Laser emission in HgCdTe in the 2-3.5 mu m range, J CRYST GR, 197(3), 1999, pp. 529-536
Risultati: 1-17 |