AAAAAA
Results:
1-17
|
Results: 17
Authors:
Ariel, N
Eizenberg, M
Wang, Y
Murarka, SP
Citation: N. Ariel et al., Deposition temperature effect on thermal stability of fluorinated amorphous carbon films utilized as low-K dielectrics, MAT SC S PR, 4(4), 2001, pp. 383-391
Authors:
Murarka, SP
Citation: Sp. Murarka, Materials aspects of copper interconnection technology for semiconductor applications, MATER SCI T, 17(7), 2001, pp. 749-758
Authors:
Liu, HD
Zhao, YP
Ramanath, G
Murarka, SP
Wang, GC
Citation: Hd. Liu et al., Thickness dependent electrical resistivity of ultrathin (< 40 nm) Cu films, THIN SOL FI, 384(1), 2001, pp. 151-156
Authors:
Wang, PI
Murarka, SP
Kaminski, DA
Bedell, S
Lanford, WA
Citation: Pi. Wang et al., Surface segregation of Al of the bilayers of pure Cu and Cu-Al alloy films, J ELCHEM SO, 148(9), 2001, pp. G481-G486
Authors:
Wang, PI
Murarka, SP
Yang, GR
Lu, TM
Citation: Pi. Wang et al., Evolution of the Cu-Al alloy/SiO2 interfaces during bias temperature stressing, J ELCHEM SO, 148(2), 2001, pp. G78-G81
Authors:
Mallikarjunan, A
Murarka, SP
Lu, TM
Citation: A. Mallikarjunan et al., Metal drift behavior in low dielectric constant organosiloxane polymer, APPL PHYS L, 79(12), 2001, pp. 1855-1857
Authors:
Krishnamoorthy, A
Chanda, K
Murarka, SP
Ramanath, G
Ryan, JG
Citation: A. Krishnamoorthy et al., Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization, APPL PHYS L, 78(17), 2001, pp. 2467-2469
Authors:
Mallikarjunan, A
Sharma, S
Murarka, SP
Citation: A. Mallikarjunan et al., Resistivity of copper films at thicknesses near the mean free path of electrons in copper - Minimization of the diffuse scattering in copper, EL SOLID ST, 3(9), 2000, pp. 437-438
Authors:
Mallikarjunan, A
Murarka, SP
Steinbruchel, C
Kumar, A
Bakhru, H
Citation: A. Mallikarjunan et al., Electrical behavior of Cu thin fluorinated PECVD oxide MIS capacitors, J ELCHEM SO, 147(9), 2000, pp. 3502-3507
Authors:
Kailasam, SK
Murarka, SP
Glicksman, ME
Citation: Sk. Kailasam et al., Investigation of aluminum-indium alloys for interconnect applications, J ELCHEM SO, 147(11), 2000, pp. 4318-4323
Authors:
Cui, H
Bhat, IB
Murarka, SP
Lu, HQ
Li, WD
Hsia, WJ
Catabay, W
Citation: H. Cui et al., Chemical mechanical polishing of low dielectric constant oxide films deposited using flowfill chemical vapor deposition technology, J ELCHEM SO, 147(10), 2000, pp. 3816-3819
Authors:
Lee, YK
Murarka, SP
Citation: Yk. Lee et Sp. Murarka, Characterization of charges in fluorinated polyimide film with different thermal history by using capacitance-voltage methods, MATER RES B, 34(6), 1999, pp. 869-876
Authors:
Neirynck, JM
Gutmann, RJ
Murarka, SP
Citation: Jm. Neirynck et al., Copper/benzocyclobutene interconnects for sub-100 nm integrated circuit technology: Elimination of high-resistivity metallic liners and high-dielectric constant polish stops, J ELCHEM SO, 146(4), 1999, pp. 1602-1607
Authors:
Sundararajan, S
Thakurta, DG
Schwendeman, DW
Murarka, SP
Gill, WN
Citation: S. Sundararajan et al., Two-dimensional wafer-scale chemical mechanical planarization models basedon lubrication theory and mass transport, J ELCHEM SO, 146(2), 1999, pp. 761-766
Authors:
de Felipe, TS
Murarka, SP
Bedell, S
Lanford, WA
Citation: Ts. De Felipe et al., Capacitance-voltage, current-voltage, and thermal stability of copper alloyed with aluminium or magnesium, THIN SOL FI, 335(1-2), 1998, pp. 49-53
Characterization of the imidization process of Low K-fluorinated polymide film during thermal curing
Authors:
Lee, YK
Murarka, SP
Citation: Yk. Lee et Sp. Murarka, Characterization of the imidization process of Low K-fluorinated polymide film during thermal curing, J MATER SCI, 33(22), 1998, pp. 5423-5426
Authors:
Lee, YK
Murarka, SP
Citation: Yk. Lee et Sp. Murarka, Study on electrical characteristics of fluorinated polyimide film, J MATER SCI, 33(16), 1998, pp. 4105-4109
Risultati:
1-17
|