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Results: 1-5 |
Results: 5

Authors: Moriarty, GR Murtagh, M Cherkaoui, K Gouez, G Kelly, PV Crean, GM Bland, SW
Citation: Gr. Moriarty et al., Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers, MAT SCI E B, 80(1-3), 2001, pp. 284-288

Authors: Murtagh, M Beechinor, JT Cordero, N Kelly, PV Crean, GM Farrell, IL O'Connor, GM Bland, SW
Citation: M. Murtagh et al., InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization, THIN SOL FI, 364(1-2), 2000, pp. 58-63

Authors: Coonan, BP Griffin, N Beechinor, JT Murtagh, M Redmond, G Crean, GM Hollander, B Mantl, S Bozzo, S Lazzari, JL d'Avitaya, FA Derrien, J Paul, DJ
Citation: Bp. Coonan et al., Investigation of Si/SiGe heterostructure material using non-destructive optical techniques, THIN SOL FI, 364(1-2), 2000, pp. 75-79

Authors: Moriarty, GR Kildemo, M Beechinor, JT Murtagh, M Kelly, PV Crean, GM Bland, SW
Citation: Gr. Moriarty et al., Optical and structural properties of InGaP heterostructures, THIN SOL FI, 364(1-2), 2000, pp. 244-248

Authors: Murtagh, M Beechinor, JT Cordero, N Kelly, PV Crean, GM Bland, SW
Citation: M. Murtagh et al., InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy, MAT SCI E B, 66(1-3), 1999, pp. 185-188
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