Authors:
Moriarty, GR
Murtagh, M
Cherkaoui, K
Gouez, G
Kelly, PV
Crean, GM
Bland, SW
Citation: Gr. Moriarty et al., Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers, MAT SCI E B, 80(1-3), 2001, pp. 284-288
Authors:
Murtagh, M
Beechinor, JT
Cordero, N
Kelly, PV
Crean, GM
Farrell, IL
O'Connor, GM
Bland, SW
Citation: M. Murtagh et al., InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization, THIN SOL FI, 364(1-2), 2000, pp. 58-63
Authors:
Coonan, BP
Griffin, N
Beechinor, JT
Murtagh, M
Redmond, G
Crean, GM
Hollander, B
Mantl, S
Bozzo, S
Lazzari, JL
d'Avitaya, FA
Derrien, J
Paul, DJ
Citation: Bp. Coonan et al., Investigation of Si/SiGe heterostructure material using non-destructive optical techniques, THIN SOL FI, 364(1-2), 2000, pp. 75-79
Authors:
Murtagh, M
Beechinor, JT
Cordero, N
Kelly, PV
Crean, GM
Bland, SW
Citation: M. Murtagh et al., InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy, MAT SCI E B, 66(1-3), 1999, pp. 185-188