Authors:
Sakharov, AV
Lundin, WV
Krestnikov, IL
Semenov, VA
Usikov, AS
Tsatsulnikov, AF
Musikhin, YG
Baidakova, MV
Alferov, ZI
Ledentsov, NN
Holst, J
Hoffmann, A
Bimberg, D
Soshnikov, IP
Gerthsen, D
Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440
Authors:
Brunkov, PN
Kovsh, AR
Ustinov, VM
Musikhin, YG
Ledentsov, NN
Konnikov, SG
Polimeni, A
Patane, A
Main, PC
Eaves, L
Kapteyn, CMA
Citation: Pn. Brunkov et al., Emission of electrons from the ground and first excited states of self-organized InAs GaAs quantum dot structures, J ELEC MAT, 28(5), 1999, pp. 486-490
Authors:
Zhukov, AE
Ustinov, VM
Kovsh, AR
Egorov, AY
Maleev, NA
Ledentsov, NN
Tsatsul'nikov, AF
Maximov, MV
Musikhin, YG
Bert, NA
Kop'ev, PS
Bimberg, D
Alferov, ZI
Citation: Ae. Zhukov et al., Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status, SEMIC SCI T, 14(6), 1999, pp. 575-581
Authors:
Sakharov, AV
Lundin, WV
Krestnikov, IL
Semenov, VA
Usikov, AS
Tsatsul'nikov, AF
Musikhin, YG
Baidakova, MV
Alferov, ZI
Ledentsov, NN
Hoffmann, A
Bimberg, D
Citation: Av. Sakharov et al., Surface-mode lasing from stacked InGaN insertions in a GaN matrix, APPL PHYS L, 74(26), 1999, pp. 3921-3923
Authors:
Ustinov, VM
Maleev, NA
Zhukov, AE
Kovsh, AR
Egorov, AY
Lunev, AV
Volovik, BV
Krestnikov, IL
Musikhin, YG
Bert, NA
Kop'ev, PS
Alferov, ZI
Ledentsov, NN
Bimberg, D
Citation: Vm. Ustinov et al., InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 mu m, APPL PHYS L, 74(19), 1999, pp. 2815-2817